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NBXDPA019LN1TAG

Onsemi

NBXDPA019LN1TAG by Onsemi

NBXDPA019LN1TAG by Onsemi is a LVDS XO Clock Oscillator with 125 MHz frequency, 50% stability, and 3.63 V max supply voltage. Ideal for applications requiring precise timing in temperature-sensitive environments due to its wide operating range from -40 °C to 85°C.

Median Price

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Lifecycle Status

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2

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Vyrian

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Digiode

USA . 1,562 parts In-Stock

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AZTECH Wire

Italy . 662 parts In-Stock

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Problanco Electronics

Mexico . 8,280 parts In-Stock

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Kulean Microsystems

USA . 8,049 parts In-Stock

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SupplyDigital Components

Austria . 5,900 parts In-Stock

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TANS Electronics

Latvia . 2,517 parts In-Stock

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Perfect Parts

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UHIMA Technologies

Türkiye . 793 parts In-Stock

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Microchip USA

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Corphita

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Corohmni

South Africa . 267 parts In-Stock

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Overview

Unleash the power of precision and reliability with the NBXDPA019LN1TAG by Onsemi! Crafted by a trusted manufacturer, this XO Clock Oscillator offers unparalleled performance and stability for a variety of applications. Experience seamless operation and exceptional frequency accuracy with this top-of-the-line component. Elevate your projects with the value, benefits, and advantages that only Onsemi can deliver. Trust in the NBXDPA019LN1TAG to take your designs to the next level.

Feature Benefit Bullets

Frequency Stability: 50%

Provides reliable and stable frequency output for accurate timekeeping applications.

Maximum Supply Voltage: 3.63 V

Allows for flexibility in power supply options while ensuring safe operation within specified limits.

Output Load: 100 OHM

Optimal output load for efficient signal transmission and compatibility with various circuit designs.

Nominal Supply Voltage: 3.3 V

Standard supply voltage for easy integration into existing systems and compatibility with common power sources.

Oscillator Type: LVDS

Low Voltage Differential Signaling technology ensures high-speed data transmission with low power consumption.

No. of Terminals: 6

Provides necessary connectivity options for easy installation and connection to external components.

Maximum Rise Time: 0.4 ms

Fast rise time allows for quick signal transitions and accurate timekeeping in time-critical applications.

Physical Dimension: 7.0mm x 5.0mm x 1.9mm

Compact size enables space-saving installation in compact electronic devices or PCB layouts.

Minimum Supply Voltage: 2.97 V

Allows operation at lower supply voltages for energy efficiency and extended battery life in portable devices.

Maximum Operating Temperature: 85 °C

Wide operating temperature range ensures reliable performance in various environmental conditions.

Minimum Operating Temperature: -40 °C

Able to withstand extreme temperatures, making it suitable for outdoor or industrial applications.

Nominal Operating Frequency: 125 MHz

High operating frequency for precision timekeeping applications requiring fast and accurate signal generation.

Maximum Fall Time: 0.4 ns

Quick fall time ensures fast signal transitions and precise timing in digital communication systems.

Maximum Symmetry (%): 52/48

High symmetry ratio ensures balanced signal output for accurate and reliable data transmission.

Mounting Feature: SURFACE MOUNT

Surface mount design allows for easy and secure mounting on PCBs, saving space and simplifying assembly processes.

Technical Specifications

XO Clock Oscillators NBXDPA019LN1TAG attributes and parameters. Explore more XO Clock Oscillators devices from Onsemi

Specs

Additional Features:

VOLTAGE 2.5 AND FREQ 250 MHZ ALSO POSSIBLE; TRI-STATE; E/D FUNCTION; DIFFERENTIAL O/P; TAPE AND REEL

Maximum Fall Time:

.4 ns

Frequency Adjustment (Mechanical):

NO

Frequency Stability:

Mounting Feature:

No. of Terminals:

6

Nominal Operating Frequency:

125 MHz

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Oscillator Type:

Output Load:

100 OHM

Physical Dimension:

7.0mm x 5.0mm x 1.9mm

Maximum Rise Time:

.4 ms

Maximum Supply Voltage:

3.63 V

Minimum Supply Voltage:

2.97 V

Nominal Supply Voltage:

3.3 V

Maximum Symmetry (%):

52/48

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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