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NBXDPA017LN1TAG

Onsemi

NBXDPA017LN1TAG by Onsemi

NBXDPA017LN1TAG by Onsemi is a ceramic XO Clock Oscillator with LVDS type, operating at 156.25 MHz frequency. It has a max supply voltage of 3.63 V and operates in temperatures ranging from -40 to 85 °C. Ideal for applications requiring precise timing in electronic systems.

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Vyrian

USA . 5,702 parts In-Stock

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Digiode

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Advanced Electronics

New Zealand . 270 parts In-Stock

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$0.773

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$0.703

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$0.634

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AZTECH Wire

Italy . 1,057 parts In-Stock

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Kulean Microsystems

USA . 6,708 parts In-Stock

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TANS Electronics

Latvia . 3,380 parts In-Stock

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Problanco Electronics

Mexico . 1,374 parts In-Stock

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Perfect Parts

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SupplyDigital Components

Austria . 855 parts In-Stock

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UHIMA Technologies

Türkiye . 441 parts In-Stock

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Corphita

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Microchip USA

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Overview

Experience superior performance and reliability with the NBXDPA017LN1TAG by Onsemi. As a leader in the industry, Onsemi guarantees top-notch quality with their XO Clock Oscillators. This versatile component is perfect for a wide range of applications, providing customers with precise timing and stable frequency output. Trust Onsemi to deliver cutting-edge technology that meets your needs seamlessly. Elevate your projects with the NBXDPA017LN1TAG and enjoy unmatched value, benefits, and advantages that only Onsemi can offer.

Feature Benefit Bullets

Package Body Material: CERAMIC

Ceramic material offers excellent thermal stability and durability, ensuring reliable performance in various operating conditions.

Frequency Stability: 50 %

High frequency stability of 50% ensures accurate and consistent timekeeping in applications where precise timing is critical.

Maximum Supply Voltage: 3.63 V

With a maximum supply voltage of 3.63V, this clock oscillator can operate efficiently without the risk of voltage spikes or damage.

Output Load: 100 OHM

Suitable for driving a 100 Ohm load, making it compatible with various circuits and systems.

Maximum Supply Current: 105 mA

Low supply current of 105mA ensures energy efficiency and extends the battery life in portable devices.

Nominal Supply Voltage: 3.3 V

Nominal supply voltage of 3.3V provides consistent power to the oscillator for reliable performance.

Oscillator Type: LVDS

Low Voltage Differential Signaling (LVDS) ensures high-speed data transmission with reduced noise and power consumption.

No. of Terminals: 6

With 6 terminals, this clock oscillator offers versatile connectivity options for integration into different electronic systems.

Maximum Rise Time: 0.4 ms

Fast rise time of 0.4 ms enables quick signal transitions, enhancing the overall responsiveness of the oscillator.

Physical Dimension: 7.0mm x 5.0mm x 1.9mm

Compact size of 7.0mm x 5.0mm x 1.9mm allows for easy integration and space-saving designs in electronic applications.

Minimum Supply Voltage: 2.97 V

With a minimum supply voltage of 2.97V, this clock oscillator can operate reliably even under low voltage conditions.

Maximum Operating Temperature: 85 °C

Wide operating temperature range of -40 to 85 °C ensures stable performance in extreme environmental conditions.

Minimum Operating Temperature: -40 °C

Ability to operate at -40 °C makes this clock oscillator suitable for use in cold environments or industrial applications.

Nominal Operating Frequency: 156.25 MHz

Nominal operating frequency of 156.25 MHz offers high accuracy and precision for timekeeping and synchronization purposes.

Maximum Fall Time: 0.4 ns

Fast fall time of 0.4 ns ensures efficient signal transitions, contributing to the overall performance of the oscillator.

Maximum Symmetry (%): 52/48

Symmetrical output waveform with a ratio of 52/48 ensures balanced signal distribution and reliable clock signal delivery.

Mounting Feature: SURFACE MOUNT

Surface mounting feature allows for easy and secure installation on PCBs, facilitating efficient production and assembly processes.

Technical Specifications

XO Clock Oscillators NBXDPA017LN1TAG attributes and parameters. Explore more XO Clock Oscillators devices from Onsemi

Specs

Additional Features:

VOLTAGE 2.5 AND FREQ 312.5 MHZ POSSIBLE; TRI-STATE; E/D FUNCTION; DIFFERENTIAL O/P; TAPE AND REEL

Maximum Fall Time:

.4 ns

Frequency Adjustment (Mechanical):

NO

Frequency Stability:

Manufacturer Series:

NBXDPA017

Mounting Feature:

No. of Terminals:

6

Nominal Operating Frequency:

156.25 MHz

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Oscillator Type:

Output Load:

100 OHM

Package Body Material:

CERAMIC

Package Equivalence Code:

DILCC6,.2

Physical Dimension:

7.0mm x 5.0mm x 1.9mm

Power Supplies (V):

2.5/3.3

Qualification:

Not Qualified

Maximum Rise Time:

.4 ms

Sub-Category:

Other Oscillators

Maximum Supply Current:

105 mA

Maximum Supply Voltage:

3.63 V

Minimum Supply Voltage:

2.97 V

Nominal Supply Voltage:

3.3 V

Maximum Symmetry (%):

52/48

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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