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NBXDDB016LN1TAG

Onsemi

NBXDDB016LN1TAG by Onsemi

NBXDDB016LN1TAG clock generator by Onsemi operates at a max output frequency of 137.93 MHz, suitable for industrial applications. With a small outline package style and no lead terminal form, it has a supply voltage range of 2.97V to 3.63V, making it ideal for compact electronic devices requiring precise timing control.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 2,244 parts In-Stock

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Digiode

USA . 651 parts In-Stock

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Problanco Electronics

Mexico . 7,067 parts In-Stock

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SupplyDigital Components

Austria . 5,786 parts In-Stock

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Kulean Microsystems

USA . 3,362 parts In-Stock

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TANS Electronics

Latvia . 1,039 parts In-Stock

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UHIMA Technologies

Türkiye . 554 parts In-Stock

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Corohmni

South Africa . 367 parts In-Stock

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Corphita

USA . 248 parts In-Stock

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Overview

Experience the unmatched precision and reliability of Onsemi with the NBXDDB016LN1TAG clock generator. Perfect for a wide range of applications, this small outline package offers a maximum output clock frequency of 137.93 MHz and a temperature grade suitable for industrial use. Trust in Onsemi's superior technology and quality materials to deliver exceptional performance and value to your projects. Upgrade your systems today with the NBXDDB016LN1TAG.

Feature Benefit Bullets

Package Body Material: CERAMIC, METAL-SEALED COFIRED

This material combination ensures durability and reliability for the clock generator, making it suitable for industrial use.

Surface Mount: YES

Allows for easy and convenient installation on circuit boards.

Maximum Supply Voltage: 3.63 V

Can handle higher voltage inputs without risk of damage, providing flexibility in usage.

Package Shape: RECTANGULAR

Rectangular shape facilitates efficient and space-saving design integration.

Maximum Output Clock Frequency: 137.93 MHz

High output frequency allows for precise timing and synchronization in electronic systems.

No. of Terminals: 6

Sufficient number of terminals for connecting to other components in a circuit.

Package Style (Meter): SMALL OUTLINE

Compact size enables the clock generator to be used in various electronic devices with limited space.

Minimum Supply Voltage: 2.97 V

Operates effectively at low voltage levels, increasing energy efficiency.

Maximum Operating Temperature: 85 °C

Can withstand high temperatures, making it suitable for industrial environments where heat may be a factor.

Minimum Operating Temperature: -40 °C

Capable of functioning in low temperature conditions, ensuring reliability in diverse operating environments.

Terminal Position: DUAL

Dual terminal position offers flexibility in circuit board layout and connection options.

Maximum Seated Height: 1.9 mm

Low profile design minimizes space occupation on the PCB.

Width: 5 mm

Narrow width contributes to the overall compactness of the clock generator.

Length: 7 mm

Short length helps in accommodating the clock generator in tight spaces.

Temperature Grade: INDUSTRIAL

Certified for operation in industrial settings where temperature fluctuations are common.

Peripheral IC Type: CLOCK GENERATOR, OTHER

Designed specifically for clock generation applications, ensuring precise timing for electronic systems.

Technology: CMOS

CMOS technology offers low power consumption and reliable performance for the clock generator.

Terminal Form: NO LEAD

Lead-free terminal form complies with environmental regulations and promotes sustainability.

Nominal Supply Voltage: 3.3 V

Operates at a standard supply voltage, ensuring compatibility with common electronic systems.

Terminal Pitch: 2.54 mm

Standard terminal pitch allows for easy connection to other components on the PCB.

Technical Specifications

Clock Generators NBXDDB016LN1TAG attributes and parameters. Explore more Clock Generators devices from Onsemi

Specs

JESD-30 Code:

R-CDSO-N6

Length:

7 mm

No. of Terminals:

6

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Maximum Output Clock Frequency:

137.93 MHz

Package Body Material:

CERAMIC, METAL-SEALED COFIRED

Package Code:

SON

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Qualification:

Not Qualified

Maximum Seated Height:

1.9 mm

Maximum Supply Voltage:

3.63 V

Minimum Supply Voltage:

2.97 V

Nominal Supply Voltage:

3.3 V

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width:

5 mm

Peripheral IC Type:

Trade Compliance

NBXDDB016LN1TAG Peripheral ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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