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NBVSBA041LNHTAG

Onsemi

NBVSBA041LNHTAG by Onsemi

NBVSBA041LNHTAG by Onsemi is a VCXO Clock Oscillator with LVPECL type, 693.48 MHz frequency, and 50% stability. It operates at 3.3V nominal voltage, suitable for applications requiring precise timing in temperature-sensitive environments.

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2

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1k+

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Vyrian

USA . 8,629 parts In-Stock

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Digiode

USA . 1,773 parts In-Stock

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Advanced Electronics

New Zealand . 100 parts In-Stock

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$0.802

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$0.730

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$0.658

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100

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AZTECH Wire

Italy . 837 parts In-Stock

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$9.980

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Problanco Electronics

Mexico . 6,688 parts In-Stock

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TANS Electronics

Latvia . 6,475 parts In-Stock

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SupplyDigital Components

Austria . 5,931 parts In-Stock

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Kulean Microsystems

USA . 4,768 parts In-Stock

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Corphita

USA . 1,559 parts In-Stock

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Microchip USA

USA . 350 parts In-Stock

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Corohmni

South Africa . 100 parts In-Stock

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UHIMA Technologies

Türkiye . 75 parts In-Stock

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Overview

Elevate your electronic designs with the NBVSBA041LNHTAG by Onsemi. Crafted with precision and expertise, this VCXO Clock Oscillator offers unparalleled frequency stability of 50%, ensuring reliable performance. With a compact design and versatile applications, this oscillator is ideal for a wide range of projects. Experience the superior quality and advanced technology that Onsemi is known for, and unlock the potential of your creations with the NBVSBA041LNHTAG. Trust in Onsemi's reputation for excellence and innovation to take your projects to the next level.

Feature Benefit Bullets

Frequency Stability: 50%

High frequency stability ensures accurate and reliable timing for various applications.

Maximum Supply Voltage: 3.63 V

Wide range of maximum supply voltage allows flexibility in power supply options.

Output Load: 50 OHM

Optimal output load for efficient signal transmission and compatibility with standard electronic components.

Nominal Supply Voltage: 3.3 V

Common nominal supply voltage for easy integration into existing systems.

Oscillator Type: LVPECL

LVPECL oscillator type offers low voltage differential signaling for improved noise immunity and signal integrity.

No. of Terminals: 6

Sufficient number of terminals for connectivity and control within a compact design.

Maximum Rise Time: 0.4 ms

Fast rise time allows for quick response and high-speed operation.

Linearity: 10%

High linearity ensures accurate frequency output over a wide range of operating conditions.

Physical Dimension: 7.0mm x 5.0mm x 1.9mm

Compact size for space-constrained applications and easy installation on circuit boards.

Minimum Supply Voltage: 2.97 V

Low minimum supply voltage for energy-efficient operation.

Maximum Operating Temperature: 85 °C

Wide operating temperature range suitable for various environmental conditions.

Minimum Control Voltage: 0.65 V

Low control voltage requirement for efficient control and adjustment of frequency.

Minimum Operating Temperature: -40 °C

Low minimum operating temperature for reliable performance in extreme cold environments.

Frequency Deviation or Pullability: 100 ppm

High frequency deviation for precise tuning and customization of output frequency.

Nominal Operating Frequency: 693.48 MHz

Common operating frequency suitable for various communication and timing applications.

Maximum Control Voltage: 2.65 V

Clear maximum control voltage limit to prevent overloading and ensure safe operation.

Maximum Fall Time: 0.4 ns

Fast fall time for rapid signal transitions and accurate timing control.

Maximum Symmetry (%): 55/45

High symmetry percentage for balanced signal output and consistent performance.

Mounting Feature: SURFACE MOUNT

Surface mount design for easy and secure mounting on circuit boards.

Technical Specifications

VCXO Clock Oscillators NBVSBA041LNHTAG attributes and parameters. Explore more VCXO Clock Oscillators devices from Onsemi

Specs

Additional Features:

TRI-STATE; ENABLE/DISABLE FUNCTION; TAPE AND REEL; SUPPLY VOLTAGE 2.5 V ALSO AVAILLABLE

Maximum Control Voltage:

2.65 V

Minimum Control Voltage:

.65 V

Maximum Fall Time:

.4 ns

Frequency Adjustment (Mechanical):

NO

Frequency Deviation or Pullability:

100 ppm

Frequency Stability:

Linearity:

10 %

Mounting Feature:

No. of Terminals:

6

Nominal Operating Frequency:

693.48 MHz

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Oscillator Type:

Output Load:

50 OHM

Physical Dimension:

7.0mm x 5.0mm x 1.9mm

Maximum Rise Time:

.4 ms

Maximum Supply Voltage:

3.63 V

Minimum Supply Voltage:

2.97 V

Nominal Supply Voltage:

3.3 V

Maximum Symmetry (%):

55/45

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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