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NBVSBA015LNHTAG

Onsemi

NBVSBA015LNHTAG by Onsemi

NBVSBA015LNHTAG by Onsemi is a VCXO Clock Oscillator with LVPECL type, 200 MHz frequency, and 50% stability. It operates at 3.3V nominal voltage and has a max operating temperature of 85 °C. Ideal for applications requiring precise timing control in electronic circuits.

Median Price

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Vyrian

USA . 7,883 parts In-Stock

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Digiode

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AZTECH Wire

Italy . 502 parts In-Stock

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TANS Electronics

Latvia . 7,186 parts In-Stock

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Problanco Electronics

Mexico . 6,598 parts In-Stock

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Kulean Microsystems

USA . 5,824 parts In-Stock

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SupplyDigital Components

Austria . 3,212 parts In-Stock

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Corphita

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Corohmni

South Africa . 402 parts In-Stock

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UHIMA Technologies

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Microchip USA

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Overview

Experience superior performance and precision with the NBVSBA015LNHTAG by Onsemi. Crafted by a trusted manufacturer, this VCXO Clock Oscillator offers unparalleled frequency stability and reliability for your applications. Whether you're in telecommunications, networking, or industrial automation, this product delivers exceptional value, benefits, and advantages to meet your needs. Trust in Onsemi's expertise and elevate your projects with the NBVSBA015LNHTAG today.

Feature Benefit Bullets

Frequency Stability: 50%

This high level of frequency stability ensures accurate and consistent performance in time-critical applications.

Maximum Supply Voltage: 3.63 V

The ability to handle high supply voltages makes the oscillator suitable for various power supply configurations.

Output Load: 50 OHM

The specified output load ensures optimal signal transmission and compatibility with typical system requirements.

Nominal Supply Voltage: 3.3 V

The close match between the nominal and maximum supply voltage enables efficient power management and stable operation.

Oscillator Type: LVPECL

The LVPECL oscillator type offers low voltage differential signaling for improved noise immunity and signal integrity.

No. of Terminals: 6

The presence of 6 terminals provides flexibility for various connection configurations and integration options.

Maximum Rise Time: 0.4 ms

The fast rise time ensures quick signal transitions, reducing signal distortion and improving overall system performance.

Linearity: 10%

The 10% linearity ensures consistent output behavior across different operating conditions, leading to reliable performance.

Physical Dimension: 7.0mm x 5.0mm x 1.9mm

The compact size of the oscillator allows for easy integration into space-constrained designs without compromising performance.

Minimum Supply Voltage: 2.97 V

The low minimum supply voltage requirement helps in minimizing power consumption and extending battery life in portable devices.

Maximum Operating Temperature: 85 °C

The high maximum operating temperature range makes the oscillator suitable for industrial and automotive applications where temperature fluctuations are common.

Minimum Control Voltage: 0.65 V

The low minimum control voltage enables precise frequency adjustments and fine-tuning of the oscillator output.

Minimum Operating Temperature: -40 °C

The wide minimum operating temperature range ensures reliable operation even in harsh environmental conditions.

Frequency Deviation or Pullability: 100 ppm

The high frequency deviation allows for fine frequency tuning, making the oscillator versatile in applications requiring precise frequency control.

Nominal Operating Frequency: 200 MHz

The high nominal operating frequency meets the demands of high-speed communication systems and data processing applications.

Maximum Control Voltage: 2.65 V

The maximum control voltage allows for wide frequency adjustment range, offering flexibility in frequency modulation.

Maximum Fall Time: 0.4 ns

The fast fall time ensures quick signal transitions, contributing to improved signal integrity and reliability.

Maximum Symmetry (%): 55/45

The specified maximum symmetry ensures balanced signal duty cycles, preventing distortion and signal degradation.

Mounting Feature: SURFACE MOUNT

The surface mounting feature simplifies assembly and installation processes, saving time and effort during production.

Technical Specifications

VCXO Clock Oscillators NBVSBA015LNHTAG attributes and parameters. Explore more VCXO Clock Oscillators devices from Onsemi

Specs

Additional Features:

TRI-STATE; ENABLE/DISABLE FUNCTION; TAPE AND REEL; SUPPLY VOLTAGE 2.5 V ALSO AVAILLABLE

Maximum Control Voltage:

2.65 V

Minimum Control Voltage:

.65 V

Maximum Fall Time:

.4 ns

Frequency Adjustment (Mechanical):

NO

Frequency Deviation or Pullability:

100 ppm

Frequency Stability:

Linearity:

10 %

Mounting Feature:

No. of Terminals:

6

Nominal Operating Frequency:

200 MHz

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Oscillator Type:

Output Load:

50 OHM

Physical Dimension:

7.0mm x 5.0mm x 1.9mm

Maximum Rise Time:

.4 ms

Maximum Supply Voltage:

3.63 V

Minimum Supply Voltage:

2.97 V

Nominal Supply Voltage:

3.3 V

Maximum Symmetry (%):

55/45

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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