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NBRD5H100T4G

Onsemi

NBRD5H100T4G by Onsemi

NBRD5H100T4G by Onsemi is a Schottky rectifier diode with 100V max reverse voltage, 5A max output current, and 0.71V max forward voltage. Ideal for power applications with operating temp range of -65 to 175 °C. Package style: small outline, surface mountable with matte tin finish.

Median Price

$0.973

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 205,500 parts In-Stock

1+ parts

-

100+ parts

$0.955

1k+ parts

$0.793

10k+ parts

$0.707

205,500

-

$0.955

$0.793

$0.707

Verical

USA . 113,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.991

10k+ parts

$0.883

113,000

-

-

$0.991

$0.883

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Chip Stock

USA . 59,000 parts In-Stock

1+ parts

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59,000

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Vyrian

USA . 9,595 parts In-Stock

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9,595

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Digiode

USA . 1,091 parts In-Stock

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1,091

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Distributors (Availability)

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Advanced Electronics

New Zealand . 500 parts In-Stock

1+ parts

$0.027

100+ parts

$0.025

1k+ parts

$0.022

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-

500

$0.027

$0.025

$0.022

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Corohmni

South Africa . 72 parts In-Stock

1+ parts

$0.485

100+ parts

-

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72

$0.485

-

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Component Stockers USA

USA . 4,595 parts In-Stock

1+ parts

$1.470

100+ parts

$1.390

1k+ parts

$1.350

10k+ parts

-

4,595

$1.470

$1.390

$1.350

-

AZTECH Wire

Italy . 916 parts In-Stock

1+ parts

$12.140

100+ parts

-

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916

$12.140

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RC Electronics

USA . 82,801 parts In-Stock

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82,801

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Kepictronics

USA . 41,000 parts In-Stock

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Perfect Parts

USA . 37,228 parts In-Stock

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Authorized Procurement Solutions

USA . 3,000 parts In-Stock

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3,000

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A-Z Elektronik GmbH

Germany . 3,000 parts In-Stock

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Kulean Microsystems

USA . 2,659 parts In-Stock

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2,659

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Corphita

USA . 2,448 parts In-Stock

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SupplyDigital Components

Austria . 2,188 parts In-Stock

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TANS Electronics

Latvia . 1,584 parts In-Stock

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1,584

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Problanco Electronics

Mexico . 1,118 parts In-Stock

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iodParts Technologies Inc.

India . 900 parts In-Stock

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900

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UHIMA Technologies

Türkiye . 685 parts In-Stock

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685

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Continental Prestige Electronics

USA . 1 parts In-Stock

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$0.485

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1

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$0.485

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Overview

Discover the NBRD5H100T4G by Onsemi, a top-of-the-line rectifier diode that guarantees unmatched quality and reliability. Designed for power applications, this Schottky diode offers a maximum output current of 5A and a maximum repetitive peak reverse voltage of 100V. With Onsemi's reputation for excellence in manufacturing and AEC-Q101 reference standard compliance, you can trust that this product will exceed your expectations. Experience the superior performance and efficiency that this diode brings to your projects, making it an essential component for any electronics enthusiast or professional.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Durable and lightweight material for the package body ensures long-term performance and easy handling.

Surface Mount: YES

Allows for easy and efficient PCB assembly, saving time and effort during production.

Maximum Reverse Current: 3.5 uA

Low reverse current ensures efficient operation and minimal power loss in the circuit.

Application: POWER

Suitable for power applications, making it a reliable choice for various electrical systems.

Maximum Operating Temperature: 175 °C

High operating temperature range allows for versatile use in different environments and conditions.

Maximum Output Current: 5 A

Capable of handling high output currents, making it suitable for power-heavy applications.

Technical Specifications

Diodes & Rectifiers NBRD5H100T4G attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Additional Features:

FREE WHEELING DIODE

Application:

POWER

Case Connection:

CATHODE

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.71 V

JESD-30 Code:

R-PSSO-G2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

105 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-65 Cel

Maximum Output Current:

5 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Reference Standard:

AEC-Q101

Maximum Repetitive Peak Reverse Voltage:

100 V

Maximum Reverse Current:

3.5 uA

Sub-Category:

Rectifier Diodes

Surface Mount:

YES

Technology:

SCHOTTKY

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

NBRD5H100T4G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

Category top products 20

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