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NBRD5H100T4G-VF01

Onsemi

NBRD5H100T4G-VF01 by Onsemi

NBRD5H100T4G-VF01 by Onsemi is a Schottky rectifier diode with max. output current of 5A and max. forward voltage of 0.71V. It operates in temp range -65 to 175°C, suitable for power applications like automotive electronics due to AEC-Q101 standard compliance.

Median Price

$2.370

Lifecycle Status

Suppliers In-Stock

12

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DigiKey

USA . 2,347 parts In-Stock

1+ parts

$2.370

100+ parts

$1.029

1k+ parts

$0.754

10k+ parts

-

2,347

$2.370

$1.029

$0.754

-

Mouser Electronics

USA . 774 parts In-Stock

1+ parts

$2.370

100+ parts

$1.030

1k+ parts

$0.821

10k+ parts

-

774

$2.370

$1.030

$0.821

-

Verical

USA . 2,000 parts In-Stock

1+ parts

-

100+ parts

-

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-

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$1.030

2,000

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-

$1.030

Distributors (In-Stock)

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Vyrian

USA . 916 parts In-Stock

1+ parts

$0.601

100+ parts

-

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916

$0.601

-

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Digiode

USA . 488 parts In-Stock

1+ parts

$1.510

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-

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488

$1.510

-

-

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Maritex

Poland . 13 parts In-Stock

1+ parts

$1.664

100+ parts

$1.004

1k+ parts

$0.847

10k+ parts

-

13

$1.664

$1.004

$0.847

-

Bristol Electronics

USA . 4,025 parts In-Stock

1+ parts

$1.875

100+ parts

$0.694

1k+ parts

$0.487

10k+ parts

-

4,025

$1.875

$0.694

$0.487

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Flip Electronics

USA . 105,000 parts In-Stock

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105,000

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Chip Stock

USA . 71,000 parts In-Stock

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71,000

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J2 Sourcing AB

Sweden . 4,830 parts In-Stock

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4,830

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TME

Poland . 2,500 parts In-Stock

1+ parts

-

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$0.912

2,500

-

-

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$0.912

Nova Conductors

Japan . 10 parts In-Stock

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10

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Distributors (Availability)

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Ampacity Inc.

Singapore . 6,104 parts In-Stock

1+ parts

$0.510

100+ parts

-

1k+ parts

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6,104

$0.510

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Corohmni

South Africa . 86 parts In-Stock

1+ parts

$0.601

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86

$0.601

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Corphita

USA . 2,221 parts In-Stock

1+ parts

$1.431

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2,221

$1.431

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Microchip USA

USA . 5,377 parts In-Stock

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$4.599

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5,377

$4.599

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ChipstoGo Electronic ltd

UK . 35,000 parts In-Stock

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35,000

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Kulean Microsystems

USA . 8,213 parts In-Stock

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8,213

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Problanco Electronics

Mexico . 7,141 parts In-Stock

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7,141

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SupplyDigital Components

Austria . 5,897 parts In-Stock

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5,897

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A-Z Elektronik GmbH

Germany . 5,610 parts In-Stock

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5,610

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Netroflash

USA . 2,000 parts In-Stock

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Authorized Procurement Solutions

USA . 1,000 parts In-Stock

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1,000

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UHIMA Technologies

Türkiye . 787 parts In-Stock

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787

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TANS Electronics

Latvia . 112 parts In-Stock

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112

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Overview

Enhance your power applications with the NBRD5H100T4G-VF01 by Onsemi. With a reputation for superior quality and reliability, Onsemi delivers cutting-edge diodes & rectifiers designed to optimize performance. The NBRD5H100T4G-VF01 offers a maximum output current of 5A and a maximum forward voltage of 0.71V, making it ideal for power applications. Say goodbye to inefficiency and hello to enhanced productivity with this innovative product. Experience the value and benefits firsthand with the NBRD5H100T4G-VF01 from Onsemi.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the diode, ensuring long-term reliability.

Surface Mount: Yes

Allows for easy and efficient installation on circuit boards, saving time and space.

Maximum Reverse Current: 3.5 uA

Low reverse current ensures minimal power loss and high efficiency.

Application: POWER

Designed for power applications, making it suitable for a wide range of electronic devices.

Maximum Operating Temperature: 175 °C

Can withstand high operating temperatures, improving the diode's performance in various environments.

Maximum Output Current: 5 A

Capable of handling high current levels, making it ideal for power applications.

Technical Specifications

Diodes & Rectifiers NBRD5H100T4G-VF01 attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Additional Features:

FREE WHEELING DIODE

Application:

POWER

Case Connection:

CATHODE

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.71 V

JESD-30 Code:

R-PSSO-G2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

105 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-65 Cel

Maximum Output Current:

5 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Reference Standard:

AEC-Q101

Maximum Repetitive Peak Reverse Voltage:

100 V

Maximum Reverse Current:

3.5 uA

Surface Mount:

YES

Technology:

SCHOTTKY

Terminal Finish:

Matte Tin (Sn) - annealed

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

NBRD5H100T4G-VF01 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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