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NB100LVEP56DT

Onsemi

NB100LVEP56DT by Onsemi

NB100LVEP56DT by Onsemi is a multiplexer/demultiplexer with 0.7 ns propagation delay, 2 functions, and 2 inputs. It operates at -40 to 85 °C and has a terminal pitch of 0.65 mm. Ideal for industrial applications requiring fast signal processing in compact designs.

Median Price

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Lifecycle Status

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5

In-Stock Inventory

1k+

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Digiode

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Legend Electronics Inc.

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Kulean Microsystems

USA . 8,301 parts In-Stock

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TANS Electronics

Latvia . 7,242 parts In-Stock

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SupplyDigital Components

Austria . 4,321 parts In-Stock

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Problanco Electronics

Mexico . 3,403 parts In-Stock

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Microchip USA

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Overview

Discover the power of seamless signal processing with the NB100LVEP56DT by Onsemi. Crafted with precision and expertise, this multiplexer & demultiplexer offers unrivaled quality and reliability for a wide range of applications. Experience lightning-fast propagation delay and precise output polarity, all in a compact and durable package body material. With a nominal supply voltage of 2.5V and a maximum operating temperature of 85 °C, this product delivers exceptional value and performance to customers seeking top-notch signal processing solutions. Elevate your projects to new heights with the NB100LVEP56DT from Onsemi.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the internal components of the multiplexer & demultiplexer.

Propagation Delay At Nominal Supply: 0.7 ns

Low propagation delay ensures fast signal transmission, making this product efficient for high-speed applications.

Surface Mount: YES

Surface mount capability makes installation easier and saves space on the circuit board.

Nominal Supply Voltage / Vsup (V): 2.5

Operating within the 2.5V nominal supply voltage makes it compatible with a wide range of systems and applications.

Maximum Operating Temperature: 85 °C

With a high maximum operating temperature, this product can withstand harsh environmental conditions.

Technical Specifications

Multiplexer & Demultiplexer NB100LVEP56DT attributes and parameters. Explore more Multiplexer & Demultiplexer devices from Onsemi

Specs

Additional Features:

NECL MODE: VCC = 0V WITH VEE = -2.375V TO -5.5V

Family:

100LVE

JESD-30 Code:

R-PDSO-G20

JESD-609 Code:

e4

Length:

6.5 mm

Logic IC Type:

No. of Functions:

2

No. of Inputs:

2

No. of Outputs:

1

No. of Terminals:

20

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Output Polarity:

COMPLEMENTARY

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSSOP20,.25

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

Packing Method:

RAIL

Peak Reflow Temperature (C):

260

Power Supplies (V):

-3.3/-5

Maximum Power Supply Current (ICC):

65 mA

Propagation Delay At Nominal Supply:

.7 ns

Propagation Delay (tpd):

.65 ns

Qualification:

Not Qualified

Maximum Seated Height:

1.2 mm

Sub-Category:

Multiplexer/Demultiplexers

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

2.375 V

Nominal Supply Voltage / Vsup (V):

2.5

Surface Mount:

YES

Technology:

ECL

Temperature Grade:

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

Terminal Pitch:

.65 mm

Terminal Position:

DUAL

Width:

4.4 mm

Trade Compliance

NB100LVEP56DT Logic ICs trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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