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N57L5128TBD10TG

Onsemi

N57L5128TBD10TG by Onsemi

N57L5128TBD10TG by Onsemi is a Digital Potentiometer with 10000 ohm resistance, 50 ppm/°C temperature coefficient, and 32 positions. It is ideal for industrial applications requiring precise control over resistance values in a compact package. The device operates b/w -40 to 85 °C with low supply current of 0.1 mA, making it suitable for various electronic systems.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 4,159 parts In-Stock

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Digiode

USA . 369 parts In-Stock

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369

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AZTECH Wire

Italy . 1,133 parts In-Stock

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$15.260

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Advanced Electronics

New Zealand . 44 parts In-Stock

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$21.644

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$19.696

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$17.748

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44

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$17.748

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Kulean Microsystems

USA . 8,287 parts In-Stock

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SupplyDigital Components

Austria . 7,705 parts In-Stock

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TANS Electronics

Latvia . 3,527 parts In-Stock

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Microchip USA

USA . 2,274 parts In-Stock

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Corphita

USA . 1,989 parts In-Stock

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UHIMA Technologies

Türkiye . 977 parts In-Stock

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Corohmni

South Africa . 265 parts In-Stock

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Problanco Electronics

Mexico . 11 parts In-Stock

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Overview

Discover the unparalleled quality and precision of Onsemi's N57L5128TBD10TG digital potentiometer, designed to enhance your electronic applications with ease. Crafted with advanced technology and a linear resistance law, this compact device offers a wide range of resistance settings in a small outline package. Whether you're adjusting audio levels, controlling motor speeds, or fine-tuning voltage levels, this digital potentiometer provides reliable performance and versatility. Upgrade your projects today with Onsemi's cutting-edge solution.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy material makes the package durable and resistant to environmental factors, ensuring long-term reliability.

Nominal Total Resistance: 10000 ohm

With a high nominal resistance, this DigiPOT can handle various applications that require precise resistance values.

Maximum Resistor Terminal Voltage: 5.5 V

The high maximum terminal voltage allows for flexibility in voltage requirements, making it suitable for a wide range of circuit designs.

Maximum Operating Temperature: 85 °C

With a high operating temperature range, this DigiPOT can operate in demanding industrial environments without risk of overheating.

Technology: CMOS

The CMOS technology used in this DigiPOT ensures low power consumption and high performance, making it an energy-efficient choice.

Technical Specifications

Digital Potentiometers (DigiPOT) N57L5128TBD10TG attributes and parameters. Explore more Digital Potentiometers (DigiPOT) devices from Onsemi

Converter Specifications

Technology:

CMOS

Resistance Law:

Linear

Nominal Total Resistance:

10 KΩ

Control Interface:

Increment/Decrement

No. of Functions:

1

Maximum Resistance Tolerance:

20 %

Electrical Characteristics

Nominal Supply Voltage:

5 V

Minimum Resistor Terminal Voltage:

0 V

Maximum Resistor Terminal Voltage:

5.5 V

Maximum Supply Current:

100 μA

Operating Conditions

Minimum Operating Temperature:

-40 °C (-40 °F)

Maximum Operating Temperature:

85 °C (185 °F)

Temperature Grade:

Nominal Temperature Coefficient:

50 ppm/°C

Peak Reflow Temperature:

260 °C (500 °F)

Maximum Time At Peak Reflow Temperature:

30 s

Moisture Sensitivity Level (MSL):

1

Form Factor

Terminal Form:

Terminal Position:

Dual

No. of Terminals:

8

Terminal Finish:

Nickel Palladium Gold

Terminal Pitch:

0.026 in (0.65 mm)

No. of Positions:

32

Maximum Seated Height:

0.057 in (1.45 mm)

Width:

0.063 in (1.6 mm)

Length:

0.114 in (2.9 mm)

Packaging

Package Shape:

Package Body Material:

Plastic/Epoxy

Package Style:

Small Outline, Low Profile, Shrink Pitch

Package Code:

Package Equivalence Code:

TSSOP8,.1

Standards and Codes

JESD-30 Code:

R-PDSO-G8

JESD-609 Code:

e4

Trade Compliance

N57L5128TBD10TG Converters trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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