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N57L5125TBD10TG

Onsemi

N57L5125TBD10TG by Onsemi

N57L5125TBD10TG by Onsemi is a 2-WIRE SERIAL Digital Potentiometer with 10000 ohm total resistance, 30 ppm/°C temperature coefficient. It is used in industrial applications for precise resistance adjustments due to its linear resistance law and compact rectangular package design.

Median Price

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Lifecycle Status

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2

In-Stock Inventory

1k+

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Vyrian

USA . 5,815 parts In-Stock

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Digiode

USA . 1,180 parts In-Stock

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AZTECH Wire

Italy . 509 parts In-Stock

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$21.580

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509

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TANS Electronics

Latvia . 6,089 parts In-Stock

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Kulean Microsystems

USA . 4,796 parts In-Stock

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Microchip USA

USA . 2,793 parts In-Stock

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SupplyDigital Components

Austria . 2,535 parts In-Stock

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Problanco Electronics

Mexico . 2,403 parts In-Stock

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Corphita

USA . 1,327 parts In-Stock

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UHIMA Technologies

Türkiye . 677 parts In-Stock

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Corohmni

South Africa . 431 parts In-Stock

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Overview

Discover the N57L5125TBD10TG by Onsemi, a top-quality digital potentiometer that offers unparalleled performance and reliability. Manufactured by Onsemi, a trusted name in the industry, this product is perfect for a wide range of applications. With its 2-wire serial control interface and linear resistance law, this digital potentiometer provides precise and accurate control over resistance values. Offering a nominal total resistance of 10000 ohms and a temperature coefficient of 30 ppm/°C, the N57L5125TBD10TG ensures superior functionality even in industrial-grade settings. Upgrade your electronics with this innovative solution today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/Epoxy material ensures durability and resistance to environmental factors, making the product suitable for various applications.

Surface Mount: YES

Surface mount design allows for easy and space-saving PCB integration, making installation and assembly convenient.

Nominal Temperature Coefficient: 30 ppm/°C

Low temperature coefficient ensures stable and accurate resistance values over a wide range of temperatures, enhancing product reliability.

Package Shape: RECTANGULAR

Rectangular package shape maximizes space efficiency on the PCB, enabling compact designs in electronic circuits.

Control Interface: 2-WIRE SERIAL

2-wire serial interface offers easy and reliable communication with microcontrollers or other devices, simplifying control and adjustment of the potentiometer.

Resistance Law: LINEAR

Linear resistance law ensures a consistent and proportional relationship between the position of the potentiometer and the resistance value, providing predictable and precise control.

Nominal Total Resistance: 10000 ohm

With a total resistance of 10000 ohm, this potentiometer offers a wide range of resistance values for versatile usage in different electronic circuits.

No. of Terminals: 6

6 terminals provide sufficient connection points for versatile applications, offering flexibility in circuit configurations.

Package Style (Meter): SMALL OUTLINE, THIN PROFILE

Small outline and thin profile package style saves space on the PCB, ideal for compact electronic devices or designs with space constraints.

Maximum Operating Temperature: 85 °C

High maximum operating temperature allows the potentiometer to withstand harsh environmental conditions or high-temperature applications, ensuring reliable performance.

Minimum Operating Temperature: -40 °C

Low minimum operating temperature enables the potentiometer to operate in cold environments or industrial settings with varying temperature conditions.

Terminal Finish: NICKEL PALLADIUM GOLD

Nickel Palladium Gold terminal finish offers excellent conductivity and corrosion resistance, ensuring long-term reliability and stable electrical connections.

Terminal Position: DUAL

Dual terminal position provides multiple connection options, allowing for flexible circuit configurations and ease of integration.

Maximum Seated Height: 1.45 mm

Low maximum seated height reduces the overall profile of the potentiometer on the PCB, enabling compact and space-efficient designs.

Width: 1.55 mm

Narrow width dimension saves space on the PCB, making the potentiometer suitable for small electronic devices or densely populated circuits.

No. of Positions: 32

32 positions offer a wide range of resistance settings for precise control and adjustment, making the potentiometer versatile for various applications.

Length: 2.85 mm

Compact length dimension contributes to space efficiency on the PCB, suitable for miniaturized electronic devices or tight layout designs.

Temperature Grade: INDUSTRIAL

Industrial temperature grade ensures the potentiometer can withstand demanding industrial environments and operating conditions, guaranteeing robust performance.

Terminal Form: GULL WING

Gull wing terminal form facilitates easy and secure soldering onto the PCB, ensuring reliable electrical connections and assembly convenience.

Maximum Supply Current: 0.035 mA

Low maximum supply current consumption minimizes power usage and heat dissipation, ideal for energy-efficient and battery-operated devices.

Converter Type: DIGITAL POTENTIOMETER

Digital potentiometer offers digital control and adjustment capabilities, providing precise and programmable resistance settings for enhanced functionality and flexibility.

Nominal Supply Voltage: 2.7 V

Low nominal supply voltage requirement enables compatibility with a wide range of electronic systems and power sources, offering versatility in application scenarios.

Terminal Pitch: 0.95 mm

Narrow terminal pitch allows for close spacing of terminals on the PCB, contributing to high-density circuit designs and miniaturized electronic devices.

Technical Specifications

Digital Potentiometers (DigiPOT) N57L5125TBD10TG attributes and parameters. Explore more Digital Potentiometers (DigiPOT) devices from Onsemi

Converter Specifications

Resistance Law:

Linear

Nominal Total Resistance:

10 KΩ

Control Interface:

2-Wire Serial

No. of Functions:

1

Electrical Characteristics

Nominal Supply Voltage:

2.7 V

Maximum Supply Current:

35 μA

Operating Conditions

Minimum Operating Temperature:

-40 °C (-40 °F)

Maximum Operating Temperature:

85 °C (185 °F)

Temperature Grade:

Nominal Temperature Coefficient:

30 ppm/°C

Form Factor

Terminal Form:

Terminal Position:

Dual

No. of Terminals:

6

Terminal Finish:

Nickel Palladium Gold

Terminal Pitch:

0.037 in (0.95 mm)

No. of Positions:

32

Maximum Seated Height:

0.057 in (1.45 mm)

Width:

0.061 in (1.55 mm)

Length:

0.112 in (2.85 mm)

Packaging

Package Shape:

Package Body Material:

Plastic/Epoxy

Package Style:

Small Outline, Thin Profile

Package Code:

Package Equivalence Code:

TSOP6,.11,37

Standards and Codes

JESD-30 Code:

R-PDSO-G6

JESD-609 Code:

e4

Trade Compliance

N57L5125TBD10TG Converters trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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