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MUR2100E

Onsemi

MUR2100E by Onsemi

MUR2100E by Onsemi is a single rectifier diode with 0.1 us reverse recovery time. It has a max forward voltage of 2.2V and can handle up to 2A output current. Ideal for ultra-fast recovery power applications, this diode operates at temperatures up to 175 °C.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

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Chip Stock

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AZTECH Wire

Italy . 1,029 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 8,773 parts In-Stock

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SupplyDigital Components

Austria . 7,036 parts In-Stock

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Kulean Microsystems

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Problanco Electronics

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Overview

Unleash the power of innovation with the MUR2100E by Onsemi. As a leading manufacturer in the field of diodes & rectifiers, Onsemi delivers top-quality products that exceed expectations. The MUR2100E offers ultra-fast recovery power with a maximum operating temperature of 175 °C, making it ideal for a wide range of applications. Whether you're looking to boost efficiency or enhance performance, this rectifier diode guarantees reliable results. Trust Onsemi to provide the value, benefits, and advantages you need to succeed in today's competitive market.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material provides durability and protection for the diode, making it suitable for various applications.

Config: SINGLE

The single configuration simplifies the circuit design and reduces the chances of errors in the connection.

Maximum Reverse Recovery Time: 0.1 us

The ultra-fast reverse recovery time ensures efficient and quick switching of the diode, making it ideal for high-speed applications.

Package Shape: ROUND

The round shape allows for easy installation and placement in circular designs.

No. of Terminals: 2

Having only 2 terminals simplifies the connection process and reduces the chances of incorrect wiring.

Package Style (Meter): LONG FORM

The long form package provides more space for heat dissipation, ensuring the diode operates at optimal temperatures.

Application: ULTRA FAST RECOVERY POWER

Designed for ultra-fast recovery power applications, this diode is suitable for high-performance systems that require quick response times.

Maximum Operating Temperature: 175 °C

With a maximum operating temperature of 175 °C, this diode can withstand high temperatures, making it suitable for a wide range of environments.

Terminal Finish: MATTE TIN

The matte tin finish provides a reliable connection and prevents corrosion, ensuring the diode maintains optimal performance over time.

Terminal Position: AXIAL

The axial terminal position allows for easy PCB mounting and connection, making installation hassle-free.

Case Connection: ISOLATED

The isolated case connection ensures that the diode can be safely used in circuits without interference from other components.

Diode Type: RECTIFIER DIODE

As a rectifier diode, this product is ideal for converting AC to DC power, making it suitable for various electronic applications.

Maximum Forward Voltage (VF): 2.2 V

The low forward voltage drop of 2.2V ensures minimal power loss and efficient operation of the diode.

Maximum Output Current: 2 A

With a maximum output current of 2A, this diode can handle high-power applications and deliver reliable performance.

Technology: AVALANCHE

The avalanche technology used in this diode allows for higher voltage handling capabilities and offers increased durability under high-stress conditions.

Terminal Form: WIRE

The wire terminal form provides easy connection and secure mounting, ensuring stable performance in various setups.

Maximum Repetitive Peak Reverse Voltage: 1000 V

With a high repetitive peak reverse voltage of 1000V, this diode is suitable for high-voltage applications that require reliable protection.

Maximum Non Repetitive Peak Forward Current: 35 A

The high non-repetitive peak forward current of 35A allows the diode to handle short-term overloads without damage, ensuring long-term reliability.

Diode Element Material: SILICON

The use of silicon as the diode element material provides excellent electrical properties and reliability, making this product a durable choice for various applications.

Technical Specifications

Diodes & Rectifiers MUR2100E attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Additional Features:

FREE WHEELING DIODE

Application:

ULTRA FAST RECOVERY POWER

Case Connection:

ISOLATED

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

2.2 V

JEDEC-95 Code:

DO-41

JESD-30 Code:

O-PALF-W2

JESD-609 Code:

e3

Maximum Non Repetitive Peak Forward Current:

35 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Maximum Output Current:

2 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

LONG FORM

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

1000 V

Maximum Reverse Recovery Time:

.1 us

Sub-Category:

Rectifier Diodes

Surface Mount:

NO

Technology:

AVALANCHE

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Trade Compliance

MUR2100E Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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