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MPTE-010G

Onsemi

MPTE-010G by Onsemi

MPTE-010G by Onsemi is a Zener TVS diode with 10V reverse standoff voltage, 11.7V breakdown voltage, and 16.7V clamping voltage. It offers peak pulse current of 90A and power of 1500W, suitable for circuit protection in applications requiring transient voltage suppression. Operating temperature ranges from -65 °C to 175°C, making it ideal for various industrial environments.

Median Price

$0.225

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 1,490 parts In-Stock

1+ parts

-

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$0.225

1k+ parts

$0.186

10k+ parts

$0.166

1,490

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$0.225

$0.186

$0.166

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 1,184 parts In-Stock

1+ parts

$0.175

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1,184

$0.175

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Vyrian

USA . 2,178 parts In-Stock

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2,178

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Distributors (Availability)

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Ampacity Inc.

Singapore . 1,005 parts In-Stock

1+ parts

$0.156

100+ parts

-

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1,005

$0.156

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Corphita

USA . 438 parts In-Stock

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$0.166

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438

$0.166

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Corohmni

South Africa . 192 parts In-Stock

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$0.184

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192

$0.184

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AZTECH Wire

Italy . 380 parts In-Stock

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$15.400

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380

$15.400

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Kulean Microsystems

USA . 7,956 parts In-Stock

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Problanco Electronics

Mexico . 5,026 parts In-Stock

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TANS Electronics

Latvia . 3,770 parts In-Stock

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SupplyDigital Components

Austria . 3,308 parts In-Stock

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UHIMA Technologies

Türkiye . 86 parts In-Stock

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Overview

Elevate your circuit protection with the MPTE-010G by Onsemi, a high-quality TVS diode from the renowned Mosorb™ series. With a voltage standoff of 10V and peak pulse power of 1500W, this Zener-type diode offers superior protection against transient voltage spikes. Ideal for various applications, including automotive electronics and industrial equipment, this bulk-packaged diode ensures reliable performance in extreme temperatures. Trust Onsemi for top-notch quality and invest in the peace of mind that comes with superior circuit protection.

Feature Benefit Bullets

Other Names: ONSONSMPTE-010G, 2156-MPTE-010G

Easily identifiable and searchable with multiple naming conventions.

Standard Package: 500

Comes in a standard package size of 500, suitable for bulk purchases.

Category: Circuit Protection, Transient Voltage Suppressors (TVS)

Designed specifically for circuit protection and handling transient voltage spikes efficiently.

Type: Zener

Zener type diode provides accurate voltage regulation and protection for sensitive components.

Voltage - Reverse Standoff (Typ): 10V

Offers a reliable reverse standoff voltage of 10V for protection against reverse polarity.

Voltage - Breakdown (Min): 11.7V

Provides a minimum breakdown voltage of 11.7V for reliable protection against voltage surges.

Voltage - Clamping (Max) @ Ipp: 16.7V

Effectively clamps voltage at a maximum of 16.7V during transient events, safeguarding connected devices.

Current - Peak Pulse (10/1000µs): 90A (8/20µs)

Can handle peak pulse currents of up to 90A efficiently, protecting sensitive electronics.

Power - Peak Pulse: 1500W (1.5kW)

With a peak pulse power rating of 1500W, ensures robust protection against high energy transients.

Operating Temperature: -65 °C ~ 175°C (TJ)

Wide operating temperature range makes it suitable for use in extreme environments.

Mounting Type: Through Hole

Easy to mount through hole design for secure and reliable installation on PCBs.

Package / Case: DO-201AD, Axial

Comes in a durable and standardized DO-201AD axial package for easy handling and installation.

Supplier Device Package: Axial

Supplied in an axial package for compatibility with existing setups and ease of integration.

Base Product Number: MPTE

Based on the MPTE series, known for quality and reliability in circuit protection applications.

Moisture Sensitivity Level (MSL): 3 (168 Hours)

MSL level of 3 ensures proper storage and handling requirements are met for optimal performance.

Technical Specifications

Additional Parts MPTE-010G attributes and parameters. Explore more Additional Parts devices from Onsemi

Technical Specifications

Other Names:

ONSONSMPTE-010G
2156-MPTE-010G

Operating Temperature:

-65°C ~ 175°C (TJ)

Current - Peak Pulse (10/1000µs):

90A (8/20µs)

Category:

Circuit Protection
Transient Voltage Suppressors (TVS) TVS Diodes

Applications:

General Purpose

Voltage - Breakdown (Min):

11.7V

Mounting Type:

Through Hole

Power - Peak Pulse:

1500W (1.5kW)

Supplier Device Package:

Axial

Standard Package:

500

Series:

Mosorb™

Type:

Zener

Voltage - Clamping (Max) @ Ipp:

16.7V

Package / Case:

DO-201AD, Axial

Voltage - Reverse Standoff (Typ):

10V

Unidirectional Channels:

1

Package:

Bulk

Power Line Protection:

No

Base Product Number:

MPTE

Moisture Sensitivity Level (MSL):

3 (168 Hours)

Trade Compliance

MPTE-010G Miscellaneous Components trade compliance attributes, and parameters.

ECCN

EAR99

HTS

8541.10.0080

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

Authentic purchasing experiences

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