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MMSZ5256CT1G

Onsemi

MMSZ5256CT1G by Onsemi

MMSZ5256CT1G by Onsemi is a Zener diode with 30V nominal reference voltage and 2% max voltage tolerance. It operates b/w -55 to 150 °C, has a max power dissipation of 0.5W, and a dynamic impedance of 49 ohm. Ideal for applications requiring precise voltage regulation in compact electronic devices.

Median Price

$0.076

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 100,620 parts In-Stock

1+ parts

-

100+ parts

$0.076

1k+ parts

$0.063

10k+ parts

$0.057

100,620

-

$0.076

$0.063

$0.057

DigiKey

USA . 100,620 parts In-Stock

1+ parts

-

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$0.100

100,620

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$0.100

Verical

USA . 60,770 parts In-Stock

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$0.071

60,770

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$0.071

Distributors (In-Stock)

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Digiode

USA . 221 parts In-Stock

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$0.062

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221

$0.062

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Chip Stock

USA . 79,000 parts In-Stock

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79,000

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Vyrian

USA . 7,432 parts In-Stock

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7,432

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Distributors (Availability)

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Corohmni

South Africa . 499 parts In-Stock

1+ parts

$0.058

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499

$0.058

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Corphita

USA . 264 parts In-Stock

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$0.058

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264

$0.058

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Advanced Electronics

New Zealand . 70 parts In-Stock

1+ parts

$0.218

100+ parts

$0.198

1k+ parts

$0.179

10k+ parts

-

70

$0.218

$0.198

$0.179

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AZTECH Wire

Italy . 164 parts In-Stock

1+ parts

$17.630

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164

$17.630

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Continental Prestige Electronics

USA . 103,770 parts In-Stock

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$0.062

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103,770

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$0.062

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TANS Electronics

Latvia . 7,645 parts In-Stock

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Kulean Microsystems

USA . 3,789 parts In-Stock

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3,789

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SupplyDigital Components

Austria . 3,218 parts In-Stock

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3,218

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Problanco Electronics

Mexico . 979 parts In-Stock

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979

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UHIMA Technologies

Türkiye . 782 parts In-Stock

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782

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Overview

Experience the quality and reliability of Onsemi with the MMSZ5256CT1G Zener Diode. This small outline package offers customers a cost-effective and efficient solution for voltage regulation in a wide range of applications. With a maximum voltage tolerance of 2% and a nominal reference voltage of 30V, this diode provides stable performance even in extreme temperatures. Trust Onsemi to deliver top-notch products that exceed your expectations.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy material provides good durability and resistance to environmental factors, making the diode reliable for long-term use.

Working Test Current: 4.2 mA

The 4.2 mA working test current ensures stable operation and minimizes the risk of overheating or failure.

Surface Mount: YES

Surface mount capability allows for easy and convenient installation on a PCB, saving space and reducing assembly time.

Maximum Operating Temperature: 150 °C

The high maximum operating temperature of 150 °C ensures the diode can withstand a wide range of operating conditions without performance degradation.

Nominal Reference Voltage: 30 V

With a nominal reference voltage of 30 V, this Zener diode is suitable for applications requiring voltage regulation and protection.

Technical Specifications

Zener Diodes MMSZ5256CT1G attributes and parameters. Explore more Zener Diodes devices from Onsemi

Specs

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Dynamic Impedance:

49 ohm

JESD-30 Code:

R-PDSO-G2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

.5 W

Nominal Reference Voltage:

30 V

Sub-Category:

Voltage Reference Diodes

Surface Mount:

YES

Technology:

ZENER

Terminal Finish:

TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Maximum Voltage Tolerance:

2 %

Working Test Current:

4.2 mA

Trade Compliance

MMSZ5256CT1G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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