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MMSZ5248ET1G

Onsemi

MMSZ5248ET1G by Onsemi

MMSZ5248ET1G by Onsemi is a Zener diode with 18V nominal reference voltage, 5% max voltage tolerance, and 21 ohm max dynamic impedance. It is used in applications requiring precise voltage regulation in compact electronic circuits.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

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Vyrian

USA . 2,213 parts In-Stock

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LWI Electronics Inc

India . 2,000 parts In-Stock

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Digiode

USA . 1,379 parts In-Stock

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AZTECH Wire

Italy . 168 parts In-Stock

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$12.100

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Problanco Electronics

Mexico . 7,972 parts In-Stock

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SupplyDigital Components

Austria . 3,911 parts In-Stock

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TANS Electronics

Latvia . 3,314 parts In-Stock

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Kulean Microsystems

USA . 3,202 parts In-Stock

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Assy Fe

Spain . 2,592 parts In-Stock

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Corphita

USA . 1,485 parts In-Stock

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UHIMA Technologies

Türkiye . 555 parts In-Stock

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Corohmni

South Africa . 340 parts In-Stock

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Overview

Experience the superior quality and reliability of the MMSZ5248ET1G Zener Diode by Onsemi. Manufactured with precision and expertise, this diode offers unmatched performance and durability for a wide range of applications. From voltage regulation to surge protection, this diode provides value and benefits that exceed expectations. Trust Onsemi's reputation for excellence and choose the MMSZ5248ET1G for all your electronic needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/Epoxy material offers good protection and insulation, making the Zener diode durable and reliable for long-term use.

Working Test Current: 7 mA

With a working test current of 7 mA, this Zener diode is suitable for a variety of low-power applications while ensuring efficient performance.

Surface Mount: YES

Being surface mountable, this Zener diode is easy to install and saves space on the circuit board, making it a convenient choice for compact designs.

Maximum Voltage Tolerance: 5%

The 5% voltage tolerance ensures accurate and stable voltage regulation, making this Zener diode ideal for precision electronic devices.

Maximum Operating Temperature: 150 °C

With a maximum operating temperature of 150 °C, this Zener diode can withstand high-temperature environments, making it suitable for industrial applications.

Nominal Reference Voltage: 18 V

The nominal reference voltage of 18V provides a stable voltage output, making this Zener diode suitable for voltage regulation in various electrical circuits.

Technical Specifications

Zener Diodes MMSZ5248ET1G attributes and parameters. Explore more Zener Diodes devices from Onsemi

Specs

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Dynamic Impedance:

21 ohm

JESD-30 Code:

R-PDSO-G2

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

.5 W

Qualification:

Not Qualified

Nominal Reference Voltage:

18 V

Sub-Category:

Voltage Reference Diodes

Surface Mount:

YES

Technology:

ZENER

Terminal Finish:

TIN

Terminal Form:

Terminal Position:

Maximum Voltage Tolerance:

5 %

Working Test Current:

7 mA

Trade Compliance

MMSZ5248ET1G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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