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MMSZ5242ET1

Onsemi

MMSZ5242ET1 by Onsemi

MMSZ5242ET1 by Onsemi is a Zener diode with 12V nominal reference voltage, 5% max voltage tolerance, and 30 ohm max dynamic impedance. It is a unidirectional diode in a small outline package ideal for applications requiring precise voltage regulation at temperatures ranging from -55 to 150 °C.

Median Price

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Lifecycle Status

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1k+

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Vyrian

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Digiode

USA . 927 parts In-Stock

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AZTECH Wire

Italy . 152 parts In-Stock

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Component Stockers USA

USA . 430 parts In-Stock

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Kulean Microsystems

USA . 7,172 parts In-Stock

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Problanco Electronics

Mexico . 5,924 parts In-Stock

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TANS Electronics

Latvia . 5,067 parts In-Stock

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SupplyDigital Components

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Corphita

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UHIMA Technologies

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South Africa . 179 parts In-Stock

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Overview

Discover the reliable MMSZ5242ET1 Zener Diode by Onsemi, a top-tier manufacturer known for its high-quality components. Ideal for a wide range of applications, this single-configured diode offers a maximum voltage tolerance of 5% and a nominal reference voltage of 12V. With a small outline package style and dual-terminal position, this diode is perfect for demanding environments with temperatures ranging from -55 to 150 °C. Trust in Onsemi's expertise to provide you with a durable and efficient solution for your electronic circuit needs. Unlock the power of precision with the MMSZ5242ET1 Zener Diode.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy body material provides durability and protection for the diode, ensuring a longer lifespan.

Working Test Current: 20 mA

The 20 mA working test current allows for efficient operation and reliability of the diode in various circuits.

Maximum Voltage Tolerance: 5 %

The 5% maximum voltage tolerance ensures accurate and consistent performance of the diode in regulating voltage.

Maximum Operating Temperature: 150 °C

With a maximum operating temperature of 150 °C, this diode can withstand high heat conditions, making it suitable for a wide range of applications.

Nominal Reference Voltage: 12 V

The 12V nominal reference voltage makes this diode ideal for applications requiring precise voltage regulation at this specific level.

Technical Specifications

Zener Diodes MMSZ5242ET1 attributes and parameters. Explore more Zener Diodes devices from Onsemi

Specs

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Dynamic Impedance:

30 ohm

JESD-30 Code:

R-PDSO-G2

JESD-609 Code:

e0

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

235

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

.5 W

Qualification:

Not Qualified

Nominal Reference Voltage:

12 V

Sub-Category:

Voltage Reference Diodes

Surface Mount:

YES

Technology:

ZENER

Terminal Finish:

TIN LEAD

Terminal Form:

Terminal Position:

Maximum Voltage Tolerance:

5 %

Working Test Current:

20 mA

Trade Compliance

MMSZ5242ET1 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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