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MMSZ5235BT3G

Onsemi

MMSZ5235BT3G by Onsemi

MMSZ5235BT3G by Onsemi is a Zener diode with 6.8V nominal reference voltage and 5% max voltage tolerance. It operates b/w -55 to 150 °C, with a max power dissipation of 0.5W. Ideal for applications requiring precise voltage regulation in compact electronic devices.

Median Price

$0.029

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 10,000 parts In-Stock

1+ parts

-

100+ parts

$0.020

1k+ parts

$0.016

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$0.015

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-

$0.020

$0.016

$0.015

Verical

USA . 10,000 parts In-Stock

1+ parts

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$0.038

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$0.038

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Flip Electronics

USA . 50,000 parts In-Stock

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Vyrian

USA . 7,510 parts In-Stock

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Digiode

USA . 1,437 parts In-Stock

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Distributors (Availability)

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AZTECH Wire

Italy . 399 parts In-Stock

1+ parts

$13.530

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399

$13.530

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Problanco Electronics

Mexico . 6,020 parts In-Stock

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6,020

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TANS Electronics

Latvia . 3,865 parts In-Stock

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3,865

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SupplyDigital Components

Austria . 3,381 parts In-Stock

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Corphita

USA . 2,487 parts In-Stock

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Kulean Microsystems

USA . 1,283 parts In-Stock

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Corohmni

South Africa . 309 parts In-Stock

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UHIMA Technologies

Türkiye . 2 parts In-Stock

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Overview

Enhance your electronic designs with the MMSZ5235BT3G Zener Diode by Onsemi. Known for their high-quality components, Onsemi delivers reliable and efficient solutions for a variety of applications. This Zener diode is designed to regulate voltage and protect sensitive electronic circuits, offering customers peace of mind and optimal performance. Trust Onsemi for superior products that meet your needs and exceed your expectations.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the diode.

Working Test Current: 20 mA

Suitable for various low-power applications.

Surface Mount: YES

Allows for easy installation on PCBs.

Maximum Voltage Tolerance: 5 %

Ensures precise voltage regulation.

Maximum Operating Temperature: 150 °C

Can withstand high temperature environments.

Maximum Dynamic Impedance: 28 ohm

Provides stable voltage regulation.

Minimum Operating Temperature: -55 °C

Suitable for use in extreme cold conditions.

Terminal Finish: MATTE TIN

Enhances solderability and conductivity.

Maximum Power Dissipation: 0.5 W

Can handle moderate power levels.

Diode Type: ZENER DIODE

Designed specifically for voltage regulation.

Nominal Reference Voltage: 6.8 V

Offers a fixed reference voltage for applications.

Technical Specifications

Zener Diodes MMSZ5235BT3G attributes and parameters. Explore more Zener Diodes devices from Onsemi

Specs

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Dynamic Impedance:

28 ohm

JESD-30 Code:

R-PDSO-G2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

.5 W

Qualification:

Not Qualified

Nominal Reference Voltage:

6.8 V

Sub-Category:

Voltage Reference Diodes

Surface Mount:

YES

Technology:

ZENER

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Maximum Voltage Tolerance:

5 %

Working Test Current:

20 mA

Trade Compliance

MMSZ5235BT3G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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