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MMSZ4716T1G

Onsemi

MMSZ4716T1G by Onsemi

MMSZ4716T1G by Onsemi is a Zener diode with a nominal reference voltage of 39V and max power dissipation of 0.5W. It operates in temperatures ranging from -55 to 150 °C, making it suitable for applications requiring precise voltage regulation in compact electronic devices. With a small outline package style and gull wing terminal form, it is ideal for surface mount designs where space is limited.

Median Price

$0.040

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 5,782 parts In-Stock

1+ parts

-

100+ parts

$0.040

1k+ parts

$0.033

10k+ parts

$0.029

5,782

-

$0.040

$0.033

$0.029

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 66 parts In-Stock

1+ parts

$0.031

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-

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66

$0.031

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Vyrian

USA . 13,191 parts In-Stock

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13,191

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Distributors (Availability)

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Corphita

USA . 754 parts In-Stock

1+ parts

$0.030

100+ parts

-

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754

$0.030

-

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Corohmni

South Africa . 134 parts In-Stock

1+ parts

$0.033

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-

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134

$0.033

-

-

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AZTECH Wire

Italy . 843 parts In-Stock

1+ parts

$10.160

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-

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843

$10.160

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Kepictronics

USA . 42,734 parts In-Stock

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42,734

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Problanco Electronics

Mexico . 7,863 parts In-Stock

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7,863

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SupplyDigital Components

Austria . 6,141 parts In-Stock

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6,141

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Continental Prestige Electronics

USA . 5,794 parts In-Stock

1+ parts

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100+ parts

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$0.031

5,794

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$0.031

TANS Electronics

Latvia . 4,755 parts In-Stock

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4,755

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Kulean Microsystems

USA . 2,565 parts In-Stock

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2,565

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UHIMA Technologies

Türkiye . 48 parts In-Stock

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48

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Overview

Experience the unparalleled quality and reliability of Onsemi's MMSZ4716T1G Zener Diode. Designed for a wide range of applications, this innovative component offers customers exceptional value and benefits. With a maximum voltage tolerance of 5% and a nominal reference voltage of 39V, this diode ensures stable performance in various operating conditions. Trust Onsemi's expertise in semiconductor technology to deliver superior products that meet your needs with precision and efficiency. Elevate your projects with the MMSZ4716T1G Zener Diode today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Ensures durability and protection for the internal components of the zener diode, making it resistant to environmental factors.

Working Test Current: 0.05 mA

Low test current ensures efficient performance and reliable operation of the zener diode.

Surface Mount: YES

Enables easy and convenient installation on PCBs, saving space and allowing for efficient assembly.

Maximum Voltage Tolerance: 5%

Provides a precise and stable voltage output, ensuring accurate functionality in various electronic circuits.

Maximum Operating Temperature: 150 °C

Withstands high temperatures, allowing the zener diode to operate effectively in demanding environments.

Nominal Reference Voltage: 39 V

Produces a stable and reliable voltage reference, suitable for a wide range of electronic applications.

Technical Specifications

Zener Diodes MMSZ4716T1G attributes and parameters. Explore more Zener Diodes devices from Onsemi

Specs

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

JESD-30 Code:

R-PDSO-G2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

.5 W

Qualification:

Not Qualified

Nominal Reference Voltage:

39 V

Sub-Category:

Voltage Reference Diodes

Surface Mount:

YES

Technology:

ZENER

Terminal Finish:

TIN

Terminal Form:

Terminal Position:

Maximum Voltage Tolerance:

5 %

Working Test Current:

.05 mA

Trade Compliance

MMSZ4716T1G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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