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MMSZ4712T1G

Onsemi

MMSZ4712T1G by Onsemi

MMSZ4712T1G by Onsemi is a Zener diode with a nominal reference voltage of 28V and max voltage tolerance of 5%. It operates in temperatures ranging from -55 to 150 °C, making it suitable for various applications requiring precise voltage regulation. With a small outline package style and matte tin terminal finish, it is ideal for surface mount designs where space is limited.

Median Price

-

Lifecycle Status

EOL

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 5,655 parts In-Stock

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Digiode

USA . 843 parts In-Stock

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843

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AZTECH Wire

Italy . 855 parts In-Stock

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$19.130

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855

$19.130

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Kulean Microsystems

USA . 8,190 parts In-Stock

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SupplyDigital Components

Austria . 5,979 parts In-Stock

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TANS Electronics

Latvia . 5,338 parts In-Stock

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Corphita

USA . 2,074 parts In-Stock

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Problanco Electronics

Mexico . 1,158 parts In-Stock

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UHIMA Technologies

Türkiye . 446 parts In-Stock

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Corohmni

South Africa . 384 parts In-Stock

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Overview

Discover the superior quality and reliability of the MMSZ4712T1G Zener diode by Onsemi. Manufactured with precision and expertise, this component is designed for a wide range of applications, offering unmatched performance and efficiency. With its small outline package style and matte tin terminal finish, this Zener diode ensures easy installation and long-lasting durability. Whether you're in need of voltage regulation or transient voltage suppression, this diode provides a reliable solution for your electronic projects. Experience the value and benefits of the MMSZ4712T1G today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and long-lasting protection for the diode, ensuring reliability in various applications.

Working Test Current: 0.05 mA

Suitable for low current applications, making it energy efficient.

Surface Mount: YES

Allows for easy and convenient installation on circuit boards.

Maximum Voltage Tolerance: 5%

Ensures precision and consistency in voltage regulation.

Maximum Operating Temperature: 150 °C

Can withstand high temperatures, making it suitable for industrial environments.

Minimum Operating Temperature: -55 °C

Ideal for use in extreme temperature conditions.

Maximum Power Dissipation: 0.5 W

Can handle power dissipation efficiently, preventing overheating.

Diode Type: ZENER DIODE

Specifically designed for voltage regulation and stability.

Technical Specifications

Zener Diodes MMSZ4712T1G attributes and parameters. Explore more Zener Diodes devices from Onsemi

Specs

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

JESD-30 Code:

R-PDSO-G2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

.5 W

Qualification:

Not Qualified

Reference Standard:

UL RECOGNIZED

Nominal Reference Voltage:

28 V

Sub-Category:

Voltage Reference Diodes

Surface Mount:

YES

Technology:

ZENER

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Maximum Voltage Tolerance:

5 %

Working Test Current:

.05 mA

Trade Compliance

MMSZ4712T1G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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