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MMSZ33T3G

Onsemi

MMSZ33T3G by Onsemi

MMSZ33T3G by Onsemi is a Zener diode with 33V nominal reference voltage, 2mA test current, and 80 ohm dynamic impedance. It is a unidirectional diode in a small outline package ideal for voltage regulation applications. With a max power dissipation of 0.5W and operating temperature up to 150 °C, it suits various electronic designs requiring precise voltage control.

Median Price

$0.051

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 200,000 parts In-Stock

1+ parts

-

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$0.053

1k+ parts

$0.044

10k+ parts

$0.039

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-

$0.053

$0.044

$0.039

Verical

USA . 200,000 parts In-Stock

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$0.049

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$0.049

Distributors (In-Stock)

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Digiode

USA . 1,692 parts In-Stock

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$0.041

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1,692

$0.041

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DigiKey Marketplace

USA . 200,000 parts In-Stock

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$0.050

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$0.050

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Vyrian

USA . 4,933 parts In-Stock

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Distributors (Availability)

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Corphita

USA . 1,478 parts In-Stock

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$0.039

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1,478

$0.039

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Corohmni

South Africa . 206 parts In-Stock

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$0.040

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206

$0.040

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AZTECH Wire

Italy . 570 parts In-Stock

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$11.820

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570

$11.820

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Continental Prestige Electronics

USA . 200,000 parts In-Stock

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$0.042

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$0.042

QUARKTWIN TECHNOLOGY LTD

USA . 20,464 parts In-Stock

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Problanco Electronics

Mexico . 4,906 parts In-Stock

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TANS Electronics

Latvia . 3,655 parts In-Stock

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Kulean Microsystems

USA . 2,644 parts In-Stock

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SupplyDigital Components

Austria . 1,088 parts In-Stock

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UHIMA Technologies

Türkiye . 500 parts In-Stock

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Overview

Unlock the power of precision with the Onsemi MMSZ33T3G Zener Diode. Crafted with quality materials and cutting-edge technology, this diode offers unmatched performance and reliability. Ideal for a wide range of applications, this diode ensures consistent voltage regulation for your electronic devices. Experience peace of mind knowing that your circuits are protected with the Onsemi MMSZ33T3G. Elevate your projects with this innovative solution today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

PLASTIC/EPOXY material provides good insulation and protection for the diode, ensuring reliable performance and durability.

Working Test Current: 2 mA

The low working test current of 2 mA allows for efficient operation and helps in minimizing power consumption.

Surface Mount: YES

Surface mount capability makes it easy to integrate this Zener diode into circuit boards, allowing for space-saving and efficient design solutions.

Maximum Voltage Tolerance: 5 %

A tight voltage tolerance of 5% ensures consistent and accurate voltage regulation in various applications.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature of 150 °C, this Zener diode can withstand elevated temperature conditions, making it suitable for a wide range of applications.

Maximum Dynamic Impedance: 80 ohm

The low maximum dynamic impedance of 80 ohm allows for efficient voltage regulation and helps in minimizing power losses.

Package Style (Meter): SMALL OUTLINE

The small outline package style saves space and facilitates easy integration into compact electronic devices.

Nominal Reference Voltage: 33 V

With a nominal reference voltage of 33 V, this Zener diode can provide stable and accurate voltage regulation in electronic circuits.

Technical Specifications

Zener Diodes MMSZ33T3G attributes and parameters. Explore more Zener Diodes devices from Onsemi

Specs

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Dynamic Impedance:

80 ohm

JESD-30 Code:

R-PDSO-G2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

.5 W

Qualification:

Not Qualified

Nominal Reference Voltage:

33 V

Sub-Category:

Voltage Reference Diodes

Surface Mount:

YES

Technology:

ZENER

Terminal Finish:

TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Maximum Voltage Tolerance:

5 %

Working Test Current:

2 mA

Trade Compliance

MMSZ33T3G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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