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MM5Z7V5ST1G

Onsemi

MM5Z7V5ST1G by Onsemi

MM5Z7V5ST1G by Onsemi is a Zener diode with 5V reverse test voltage, 7.5V nominal reference voltage, and 2.15% max voltage tolerance. It is ideal for applications requiring precise voltage regulation in electronic circuits due to its small outline package and unidirectional polarity.

Median Price

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Lifecycle Status

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2

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1k+

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Vyrian

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AZTECH Wire

Italy . 746 parts In-Stock

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$11.710

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QUARKTWIN TECHNOLOGY LTD

USA . 24,225 parts In-Stock

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SupplyDigital Components

Austria . 6,538 parts In-Stock

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Kulean Microsystems

USA . 4,148 parts In-Stock

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Perfect Parts

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TANS Electronics

Latvia . 2,256 parts In-Stock

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UHIMA Technologies

Türkiye . 899 parts In-Stock

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Corphita

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Problanco Electronics

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Corohmni

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Overview

Discover the unparalleled quality and reliability of the MM5Z7V5ST1G Zener Diode by Onsemi. With a maximum reverse current of 1 uA and a working test current of 5 mA, this diode is perfect for a wide range of applications. From voltage regulation to surge protection, this product offers exceptional value and performance. Trust in the expertise of Onsemi, a renowned manufacturer known for delivering top-notch components. Upgrade your projects with the MM5Z7V5ST1G and experience the advantages of precision engineering and unmatched durability.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material provides durability and protection for the zener diode, ensuring long-lasting performance.

Working Test Current: 5 mA

The zener diode can reliably handle a working test current of 5 mA, making it suitable for various electronic applications.

Surface Mount: YES

Being surface mountable allows for easy and efficient installation on circuit boards.

Maximum Reverse Current: 1 uA

The low maximum reverse current ensures efficient performance and reliability of the zener diode.

Maximum Operating Temperature: 150 °C

With a maximum operating temperature of 150 °C, this zener diode can withstand high temperatures in electronic devices.

Technical Specifications

Zener Diodes MM5Z7V5ST1G attributes and parameters. Explore more Zener Diodes devices from Onsemi

Specs

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Dynamic Impedance:

160 ohm

Maximum Forward Voltage (VF):

.9 V

JESD-30 Code:

R-PDSO-F2

JESD-609 Code:

e3

Maximum Knee Impedance:

15 ohm

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-65 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

.2 W

Qualification:

Not Qualified

Nominal Reference Voltage:

7.5 V

Maximum Reverse Current:

1 uA

Reverse Test Voltage:

5 V

Sub-Category:

Voltage Reference Diodes

Surface Mount:

YES

Technology:

ZENER

Terminal Finish:

TIN

Terminal Form:

Terminal Position:

Maximum Voltage Tolerance:

2.15 %

Working Test Current:

5 mA

Trade Compliance

MM5Z7V5ST1G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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