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MM5Z5V1ST1

Onsemi

MM5Z5V1ST1 by Onsemi

MM5Z5V1ST1 by Onsemi is a Zener diode with a nominal reference voltage of 5.1V and max power dissipation of 0.2W. It operates at a max temperature of 150°C, has a working test current of 5mA, and features unidirectional polarity. This diode is commonly used in applications requiring precise voltage regulation in electronic circuits.

Median Price

$0.030

Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

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Rochester

USA . 2,196 parts In-Stock

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Digiode

USA . 60 parts In-Stock

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Chip Stock

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Vyrian

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Bristol Electronics

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Atlantic Semiconductor

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Prism Electronics

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Corphita

USA . 2,272 parts In-Stock

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Corohmni

South Africa . 235 parts In-Stock

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AZTECH Wire

Italy . 189 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

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Kulean Microsystems

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Problanco Electronics

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TANS Electronics

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Overview

Unlock the power of precision with the MM5Z5V1ST1 Zener Diode by Onsemi. Crafted with quality and expertise, this single-configured diode offers a wide range of applications in electronics, from voltage regulation to signal conditioning. Experience the unrivaled performance and reliability of Onsemi products, designed to meet the highest standards in the industry. Elevate your projects with the MM5Z5V1ST1 Zener Diode's superior capabilities, providing precise voltage control and protection against electrical spikes. Trust Onsemi to deliver cutting-edge solutions that exceed expectations.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/Epoxy material ensures durability and protection for the diode, making it suitable for various applications.

Working Test Current: 5 mA

The low working test current requirement of 5 mA indicates efficient performance and energy savings.

Surface Mount: YES

The surface mount feature allows for easy and convenient installation on circuit boards, saving space and simplifying assembly.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature of 150°C, this diode can withstand elevated temperatures without compromising performance.

Nominal Reference Voltage: 5.1 V

The specific nominal reference voltage of 5.1 V ensures accurate and consistent voltage regulation, making it ideal for precision applications.

Technical Specifications

Zener Diodes MM5Z5V1ST1 attributes and parameters. Explore more Zener Diodes devices from Onsemi

Specs

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Dynamic Impedance:

60 ohm

JESD-30 Code:

R-PDSO-F2

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

.2 W

Qualification:

Not Qualified

Nominal Reference Voltage:

5.1 V

Sub-Category:

Voltage Reference Diodes

Surface Mount:

YES

Technology:

ZENER

Terminal Finish:

TIN

Terminal Form:

Terminal Position:

Maximum Voltage Tolerance:

2.16 %

Working Test Current:

5 mA

Trade Compliance

MM5Z5V1ST1 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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