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MM3Z8V2ST1

Onsemi

MM3Z8V2ST1 by Onsemi

MM3Z8V2ST1 by Onsemi is a Zener diode with 8.2V nominal reference voltage and 15 ohm max dynamic impedance. It operates at up to 150°C, has a max voltage tolerance of 2.07%, and is suitable for applications requiring precise voltage regulation in compact electronic devices.

Median Price

$0.035

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 86,718 parts In-Stock

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-

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$0.030

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$0.025

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$0.023

86,718

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$0.030

$0.025

$0.023

DigiKey

USA . 86,718 parts In-Stock

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$0.040

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$0.040

Verical

USA . 57,000 parts In-Stock

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57,000

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Digiode

USA . 633 parts In-Stock

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$0.024

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633

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Chip Stock

USA . 86,690 parts In-Stock

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Vyrian

USA . 2,674 parts In-Stock

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Corphita

USA . 1,062 parts In-Stock

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$0.022

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$0.022

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Corohmni

South Africa . 53 parts In-Stock

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$0.025

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53

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Component Stockers USA

USA . 61,515 parts In-Stock

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$0.030

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$0.020

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$0.020

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$0.020

61,515

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$0.020

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$0.020

AZTECH Wire

Italy . 379 parts In-Stock

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$21.380

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379

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Continental Prestige Electronics

USA . 89,718 parts In-Stock

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$0.021

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$0.021

QUARKTWIN TECHNOLOGY LTD

USA . 20,416 parts In-Stock

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Kepictronics

USA . 5,075 parts In-Stock

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Kulean Microsystems

USA . 4,018 parts In-Stock

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SupplyDigital Components

Austria . 3,638 parts In-Stock

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TANS Electronics

Latvia . 3,415 parts In-Stock

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Authorized Procurement Solutions

USA . 2,800 parts In-Stock

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2,800

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Problanco Electronics

Mexico . 833 parts In-Stock

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UHIMA Technologies

Türkiye . 273 parts In-Stock

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Overview

Unlock a world of possibilities with the MM3Z8V2ST1 Zener Diode by Onsemi. Known for their top-quality products, Onsemi delivers reliable and durable components that are perfect for a wide range of applications. From voltage regulation to signal conditioning, this Zener diode offers unparalleled performance, precision, and efficiency. Say goodbye to fluctuations and instabilities with the MM3Z8V2ST1, your go-to solution for all your electronic needs. Trust Onsemi to provide you with the best in the industry.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material provides durability and protection for the diode, making it suitable for a variety of applications.

Working Test Current: 5 mA

The low working test current of 5 mA ensures efficient performance and minimizes power consumption.

Surface Mount: YES

Being surface mountable allows for easy installation and space-saving on PCBs.

Maximum Operating Temperature: 150 °C

The high maximum operating temperature of 150°C ensures reliability in various environmental conditions.

Nominal Reference Voltage: 8.2 V

The nominal reference voltage of 8.2 V indicates the precise voltage at which the diode will regulate.

Technical Specifications

Zener Diodes MM3Z8V2ST1 attributes and parameters. Explore more Zener Diodes devices from Onsemi

Specs

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Dynamic Impedance:

15 ohm

JESD-30 Code:

R-PDSO-G2

JESD-609 Code:

e0

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

235

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

.2 W

Qualification:

Not Qualified

Nominal Reference Voltage:

8.2 V

Sub-Category:

Voltage Reference Diodes

Surface Mount:

YES

Technology:

ZENER

Terminal Finish:

TIN LEAD

Terminal Form:

Terminal Position:

Maximum Voltage Tolerance:

2.07 %

Working Test Current:

5 mA

Trade Compliance

MM3Z8V2ST1 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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