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MM3Z6V8ST1

Onsemi

MM3Z6V8ST1 by Onsemi

MM3Z6V8ST1 by Onsemi is a Zener diode with 6.8V nominal reference voltage and 2.06% max voltage tolerance. It operates at up to 150 °C, has a max power dissipation of 0.2W, and is ideal for applications requiring precise voltage regulation in compact electronic devices.

Median Price

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Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

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Voyager Components

USA . 11,500 parts In-Stock

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PC Components Company LLC

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Bristol Electronics

USA . 5,744 parts In-Stock

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Vyrian

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Digiode

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AZTECH Wire

Italy . 611 parts In-Stock

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$14.120

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Component Stockers USA

USA . 487 parts In-Stock

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$99.990

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Authorized Procurement Solutions

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TANS Electronics

Latvia . 7,762 parts In-Stock

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Kepictronics

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SupplyDigital Components

Austria . 2,547 parts In-Stock

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Corphita

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Kulean Microsystems

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Problanco Electronics

Mexico . 653 parts In-Stock

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UHIMA Technologies

Türkiye . 495 parts In-Stock

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Corohmni

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Overview

Unlock the power of precision with the MM3Z6V8ST1 Zener Diode by Onsemi. This high-quality component boasts unparalleled reliability and performance, making it the perfect choice for a wide range of applications. From voltage regulation to signal conditioning, this Zener Diode offers unmatched value and benefits to customers seeking superior quality and consistency. Trust Onsemi's expertise in semiconductor manufacturing to deliver a product that exceeds expectations and provides lasting results. Elevate your projects with the MM3Z6V8ST1 and experience the difference today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/Epoxy material provides durability and protection to the diode, making it suitable for various applications.

Working Test Current: 5 mA

The low working test current of 5 mA ensures efficient operation and reliability of the diode.

Surface Mount: YES

Surface mount capability allows for easy and convenient installation on PCBs, saving space and improving overall design flexibility.

Maximum Operating Temperature: 150 °C

The diode can operate efficiently at high temperatures of up to 150 °C, making it suitable for use in demanding environments.

Nominal Reference Voltage: 6.8 V

The nominal reference voltage of 6.8 V ensures consistent and precise voltage regulation, making it an ideal choice for voltage stabilization applications.

Technical Specifications

Zener Diodes MM3Z6V8ST1 attributes and parameters. Explore more Zener Diodes devices from Onsemi

Specs

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Dynamic Impedance:

15 ohm

JESD-30 Code:

R-PDSO-G2

JESD-609 Code:

e0

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

235

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

.2 W

Qualification:

Not Qualified

Nominal Reference Voltage:

6.8 V

Sub-Category:

Voltage Reference Diodes

Surface Mount:

YES

Technology:

ZENER

Terminal Finish:

TIN LEAD

Terminal Form:

Terminal Position:

Maximum Voltage Tolerance:

2.06 %

Working Test Current:

5 mA

Trade Compliance

MM3Z6V8ST1 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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