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MM3Z4V7ST1

Onsemi

MM3Z4V7ST1 by Onsemi

MM3Z4V7ST1 by Onsemi is a Zener diode with a nominal reference voltage of 4.7V and max power dissipation of 0.2W. It operates in temperatures up to 150 °C, has a max voltage tolerance of 2.15%, and features a surface-mount package for compact designs. Ideal for applications requiring precise voltage regulation in electronic circuits.

Median Price

$0.150

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (In-Stock)

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Component Electronics Inc.

Canada . 2,800 parts In-Stock

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$0.150

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Vyrian

USA . 9,220 parts In-Stock

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Bristol Electronics

USA . 2,916 parts In-Stock

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Atlantic Semiconductor

USA . 2,916 parts In-Stock

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Digiode

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Prism Electronics

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AZTECH Wire

Italy . 951 parts In-Stock

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Kulean Microsystems

USA . 7,254 parts In-Stock

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Problanco Electronics

Mexico . 5,557 parts In-Stock

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SupplyDigital Components

Austria . 3,613 parts In-Stock

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TANS Electronics

Latvia . 1,904 parts In-Stock

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UHIMA Technologies

Türkiye . 696 parts In-Stock

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Corphita

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Corohmni

South Africa . 160 parts In-Stock

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Overview

Discover the MM3Z4V7ST1 by Onsemi, a top-quality Zener diode that offers reliable performance and precise voltage regulation. Manufactured by the reputable Onsemi brand, this diode is perfect for a wide range of applications. From power supplies to voltage references, this diode provides customers with the value, benefits, and advantages they need. Trust in Onsemi's expertise and choose the MM3Z4V7ST1 for all your voltage regulation needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the diode lightweight and resistant to environmental factors, ensuring durability and reliability.

Working Test Current: 5 mA

The low working test current of 5mA allows for efficient and safe operation of the diode in various circuit applications.

Surface Mount: YES

Being surface mountable makes the diode easy to install and saves space on the PCB, making it ideal for compact electronic devices.

Maximum Voltage Tolerance: 2.15%

The tight voltage tolerance of 2.15% ensures accurate and stable voltage regulation in the circuit.

Maximum Operating Temperature: 150 °C

The high maximum operating temperature of 150 °C allows the diode to withstand elevated temperatures, increasing its versatility.

Maximum Dynamic Impedance: 80 ohm

Low dynamic impedance of 80 ohms ensures efficient voltage regulation and minimal power loss in the circuit.

Nominal Reference Voltage: 4.7 V

The nominal reference voltage of 4.7V provides precise voltage regulation, making it suitable for various applications requiring stable voltage output.

Polarity: UNIDIRECTIONAL

The unidirectional polarity ensures that the diode conducts current in only one direction, offering reliable and consistent performance in circuit protection.

Technical Specifications

Zener Diodes MM3Z4V7ST1 attributes and parameters. Explore more Zener Diodes devices from Onsemi

Specs

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Dynamic Impedance:

80 ohm

JESD-30 Code:

R-PDSO-G2

JESD-609 Code:

e0

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

235

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

.2 W

Qualification:

Not Qualified

Nominal Reference Voltage:

4.7 V

Sub-Category:

Voltage Reference Diodes

Surface Mount:

YES

Technology:

ZENER

Terminal Finish:

TIN LEAD

Terminal Form:

Terminal Position:

Maximum Voltage Tolerance:

2.15 %

Working Test Current:

5 mA

Trade Compliance

MM3Z4V7ST1 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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