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MKP3V120RL

Onsemi

MKP3V120RL by Onsemi

MKP3V120RL by Onsemi is a SIDAC diode with 20A peak current, 110V breakdown voltage, and 100mA holding current. It is used in trigger devices, offering -40 to 125 °C operating range. Ideal for applications requiring reliable AC switching capabilities.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 2,062 parts In-Stock

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Digiode

USA . 2,000 parts In-Stock

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2,000

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Problanco Electronics

Mexico . 7,888 parts In-Stock

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Kulean Microsystems

USA . 5,828 parts In-Stock

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SupplyDigital Components

Austria . 4,911 parts In-Stock

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Corphita

USA . 2,286 parts In-Stock

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UHIMA Technologies

Türkiye . 795 parts In-Stock

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795

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TANS Electronics

Latvia . 392 parts In-Stock

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Corohmni

South Africa . 73 parts In-Stock

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Overview

Unlock the power of innovation with the Onsemi MKP3V120RL Silicone Diode for Alternating Current. Manufactured by industry leader Onsemi, this SIDAC offers unparalleled quality and reliability. Ideal for a variety of applications, this product provides customers with superior performance and efficiency. With a wide range of features and benefits, the MKP3V120RL delivers exceptional value for all your electronic needs. Experience the difference with Onsemi.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the SIDAC, ensuring a long lifespan.

Configuration: SINGLE

SINGLE configuration simplifies the setup and installation process for the SIDAC.

Non Repetitive Peak On-state Current: 20 A

High peak current capacity allows the SIDAC to handle sudden surges and spikes effectively.

Nominal Holding Current: 100 mA

Stable holding current ensures reliable performance and consistent operation of the SIDAC.

Minimum Breakdown Voltage: 110 V

Low breakdown voltage threshold offers protection against voltage fluctuations.

Package Shape: ROUND

Round shape facilitates easy installation and fitting in various electronic circuits.

Terminal Form: WIRE

Wire terminals provide secure connections and ease of installation for the SIDAC.

No. of Terminals: 2

Two terminals simplify the wiring process and ensure proper connectivity of the SIDAC.

Maximum Operating Temperature: 125 °C

High operating temperature range allows the SIDAC to function effectively in various conditions.

Trigger Device Type: SIDAC

Specific SIDAC trigger device type ensures compatibility and optimal performance in alternating current applications.

Minimum Operating Temperature: -40 °C

Wide temperature range enables the SIDAC to operate efficiently in cold environments.

Terminal Finish: TIN LEAD

Tin lead finish on terminals enhances conductivity and ensures reliable connections for the SIDAC.

Terminal Position: AXIAL

Axial terminal position simplifies the placement and alignment of the SIDAC in electronic circuits.

Case Connection: ISOLATED

Isolated case connection enhances safety and prevents potential electrical issues in the SIDAC.

Reference Standard: UL RECOGNIZED

UL recognized standard ensures the quality and safety compliance of the SIDAC for reliable performance.

Technical Specifications

Silicone Diode For Alternating Current (SIDAC) MKP3V120RL attributes and parameters. Explore more Silicone Diode For Alternating Current (SIDAC) devices from Onsemi

Specs

Maximum Breakdown Voltage:

130 V

Minimum Breakdown Voltage:

110 V

Case Connection:

Configuration:

Maximum Holding Current:

100 mA

Nominal Holding Current:

100 mA

JESD-30 Code:

O-PALF-W2

JESD-609 Code:

e0

Non Repetitive Peak On-state Current:

20 A

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

Qualification:

Not Qualified

Reference Standard:

UL RECOGNIZED

Sub-Category:

Silicon Surge Protectors

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

WIRE

Terminal Position:

Trigger Device Type:

Trade Compliance

MKP3V120RL Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.30.00.80

SB

8541.30.00.80

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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