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MKP3V120

Onsemi

MKP3V120 by Onsemi

MKP3V120 by Onsemi is a SIDAC diode with 20A peak current, 110V breakdown voltage, and 100mA holding current. It is used as a trigger device in applications requiring AC switching. With an operating temperature range of -40 to 125 °C, it offers reliable performance in various electronic circuits.

Median Price

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Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

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Digiode

USA . 1,832 parts In-Stock

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Vyrian

USA . 1,219 parts In-Stock

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Bristol Electronics

USA . 1,000 parts In-Stock

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Atlantic Semiconductor

USA . 1,000 parts In-Stock

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Kulean Microsystems

USA . 4,767 parts In-Stock

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Corphita

USA . 1,644 parts In-Stock

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UHIMA Technologies

Türkiye . 304 parts In-Stock

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Corohmni

South Africa . 242 parts In-Stock

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TANS Electronics

Latvia . 140 parts In-Stock

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SupplyDigital Components

Austria . 93 parts In-Stock

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Problanco Electronics

Mexico . 66 parts In-Stock

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Overview

Discover the power of the Onsemi MKP3V120 Silicone Diode for Alternating Current (SIDAC) - a high-quality product that offers unparalleled performance and reliability. With a non-repetitive peak on-state current of 20A and a nominal holding current of 100mA, this SIDAC is perfect for a wide range of applications. From lighting control to motor drives, this product's innovative design and superior construction ensure optimal functionality and efficiency. Trust Onsemi for cutting-edge technology that delivers value and benefits to customers across various industries.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and resistance to external elements, ensuring a longer lifespan for the product.

Configuration: SINGLE

Simplifies the design and installation process, making it user-friendly and efficient.

Non Repetitive Peak On-state Current: 20 A

Capable of handling high currents, making it suitable for heavy-duty applications.

Nominal Holding Current: 100 mA

Provides reliable holding current to ensure stable operation in various conditions.

Minimum Breakdown Voltage: 110 V

Ensures efficient breakdown voltage for effective performance in alternating current circuits.

Package Shape: ROUND

A common package shape that is versatile and easy to handle in various applications.

Terminal Form: WIRE

Wire terminals simplify connection and installation, making it convenient for users.

No. of Terminals: 2

Simple and straightforward terminal configuration for easy integration into circuits.

Maximum Operating Temperature: 125 °C

A high maximum operating temperature ensures reliability and stability under different temperature conditions.

Trigger Device Type: SIDAC

SIDAC technology provides precise triggering and control, enhancing performance and efficiency.

Minimum Operating Temperature: -40 °C

Capable of operating in low temperatures, making it suitable for a wide range of environments.

Terminal Finish: TIN

Tin finish on terminals provides good conductivity and corrosion resistance for long-term reliability.

Terminal Position: AXIAL

Axial terminal position makes it easy to incorporate into existing circuit designs.

Case Connection: ISOLATED

Isolated case connection enhances safety and reduces the risk of electrical interference.

Maximum Holding Current: 100 mA

Sufficient holding current for stable operation without the risk of false triggering.

Maximum Breakdown Voltage: 130 V

Higher breakdown voltage provides added protection and reliability in alternating current circuits.

Peak Reflow Temperature °C: 260

Capable of withstanding high reflow temperatures, ensuring durability during manufacturing processes.

Reference Standard: UL RECOGNIZED

Compliance with UL recognized standard indicates high quality and safety standards.

Technical Specifications

Silicone Diode For Alternating Current (SIDAC) MKP3V120 attributes and parameters. Explore more Silicone Diode For Alternating Current (SIDAC) devices from Onsemi

Specs

Maximum Breakdown Voltage:

130 V

Minimum Breakdown Voltage:

110 V

Case Connection:

Configuration:

Maximum Holding Current:

100 mA

Nominal Holding Current:

100 mA

JESD-30 Code:

O-PALF-W2

JESD-609 Code:

e3

Non Repetitive Peak On-state Current:

20 A

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

Peak Reflow Temperature (C):

260

Qualification:

Not Qualified

Reference Standard:

UL RECOGNIZED

Sub-Category:

Silicon Surge Protectors

Surface Mount:

NO

Terminal Finish:

TIN

Terminal Form:

WIRE

Terminal Position:

Trigger Device Type:

Trade Compliance

MKP3V120 Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.30.00.80

SB

8541.30.00.80

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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