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MDC5100R2

Onsemi

MDC5100R2 by Onsemi

The Onsemi MDC5100R2 is an RF/Microwave Antenna component with linear polarization. It operates b/w -40 °C to 85°C, making it suitable for PCS/WLAN/mobile systems. The terminal finish is Tin/Lead (Sn/Pb), ideal for antenna support circuits.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 1,588 parts In-Stock

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1,588

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Digiode

USA . 1,461 parts In-Stock

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1,461

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Metaverse IC Inc.

Canada . 92,000 parts In-Stock

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92,000

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Problanco Electronics

Mexico . 8,077 parts In-Stock

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8,077

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Kulean Microsystems

USA . 7,947 parts In-Stock

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7,947

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TANS Electronics

Latvia . 4,838 parts In-Stock

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4,838

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SupplyDigital Components

Austria . 3,601 parts In-Stock

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3,601

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A-Z Elektronik GmbH

Germany . 2,760 parts In-Stock

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2,760

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Corphita

USA . 982 parts In-Stock

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982

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UHIMA Technologies

Türkiye . 450 parts In-Stock

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450

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Corohmni

South Africa . 106 parts In-Stock

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Overview

Unlock the power of seamless connectivity with the MDC5100R2 by Onsemi. As a leading manufacturer in the industry, Onsemi delivers top-notch quality and reliability in RF/Microwave Antennas. Designed for PCS, WLAN, and mobile systems, this antenna support circuit offers exceptional value and benefits to customers. Say goodbye to connectivity issues and experience superior performance with the MDC5100R2.

Feature Benefit Bullets

Construction: COMPONENT

High quality components ensure reliability and durability of the antenna, making it a long-lasting choice.

Application: PCS/WLAN/MOBILE SYSTEM

This antenna is versatile and can be used across multiple systems, providing flexibility in its usage.

Maximum Operating Temperature: 85 °C

With a high maximum operating temperature, this antenna can withstand heat without compromising performance.

Minimum Operating Temperature: -40 °C

The low minimum operating temperature allows this antenna to be used in a wide range of environments, including colder climates.

Terminal Finish: Tin/Lead (Sn/Pb)

The tin/lead finish ensures good conductivity and connection stability for optimal performance.

Polarization: LINEAR

Linear polarization helps in reducing interference and improving signal quality, making this antenna suitable for various applications.

RF or Microwave Device Type: ANTENNA SUPPORT CIRCUIT

The antenna support circuit enhances the overall performance of the RF or microwave device, ensuring efficient signal transmission.

Technical Specifications

RF/Microwave Antennas MDC5100R2 attributes and parameters. Explore more RF/Microwave Antennas devices from Onsemi

Specs

Application:

PCS/WLAN/MOBILE SYSTEM

Construction:

COMPONENT

JESD-609 Code:

e0

Omni-Directional:

NO

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Polarization:

LINEAR

RF or Microwave Device Type:

Terminal Finish:

Tin/Lead (Sn/Pb)

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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