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SPSPRDA2-P

Onsemi

SPSPRDA2-P by Onsemi

The Onsemi SPSPRDA2-P is a COAXIAL RF antenna with 50 ohm impedance, operating from 865-928 MHz. It offers a VSWR of 2, elliptical polarization, and can withstand temperatures from -40 to 85 °C. Ideal for RF/Microwave applications requiring high-performance antennas.

Median Price

$120.802

Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

Distributors (Authorized)

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Chip1Stop

Japan . 16 parts In-Stock

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$63.000

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$63.000

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Arrow

USA . 16 parts In-Stock

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$160.830

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$160.830

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Verical

USA . 672 parts In-Stock

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$134.225

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$127.162

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$127.162

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Rochester

USA . 672 parts In-Stock

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$107.380

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$96.080

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$90.420

672

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$107.380

$96.080

$90.420

Distributors (In-Stock)

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Digiode

USA . 1,642 parts In-Stock

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$52.126

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Vyrian

USA . 3,426 parts In-Stock

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Flip Electronics

USA . 672 parts In-Stock

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672

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Distributors (Availability)

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AZTECH Wire

Italy . 1,127 parts In-Stock

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$17.570

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$17.570

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Corphita

USA . 2,143 parts In-Stock

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$49.383

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$49.383

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Corohmni

South Africa . 392 parts In-Stock

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$54.870

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392

$54.870

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Component Stockers USA

USA . 42 parts In-Stock

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$62.430

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$62.430

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Authorized Procurement Solutions

USA . 10,000 parts In-Stock

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TANS Electronics

Latvia . 4,637 parts In-Stock

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4,637

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Problanco Electronics

Mexico . 4,630 parts In-Stock

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4,630

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SupplyDigital Components

Austria . 3,707 parts In-Stock

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Kulean Microsystems

USA . 2,299 parts In-Stock

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2,299

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UHIMA Technologies

Türkiye . 811 parts In-Stock

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Overview

Unlock the power of seamless connectivity with the SPSPRDA2-P by Onsemi. Crafted with precision and expertise, this RF/Microwave Antenna offers unparalleled performance in a compact design. From improved signal strength to enhanced data transmission, this antenna is designed to meet your needs with ease. Whether you're in the automotive industry, IoT sector, or telecommunications field, this versatile antenna delivers exceptional value and reliability. Elevate your projects and stay ahead of the curve with the SPSPRDA2-P - where quality meets innovation.

Feature Benefit Bullets

Maximum Voltage Standing Wave Ratio: 2

Having a maximum VSWR of 2 indicates good impedance matching, resulting in efficient power transfer and minimal reflection back to the source.

Construction: COAXIAL

Coaxial construction provides good shielding against external interference, ensuring reliable performance in high-frequency applications.

Maximum Operating Temperature: 85 °C

With a high maximum operating temperature, this antenna can withstand harsh environmental conditions without degradation in performance.

Minimum Operating Temperature: -40 °C

The low minimum operating temperature allows this antenna to function effectively in cold environments, making it versatile in various climates.

Polarization: ELLIPTICAL

Elliptical polarization offers improved resistance to multipath interference, enhancing signal reliability and stability in communications.

Characteristic Impedance: 50 ohm

A characteristic impedance of 50 ohm is standard in RF applications, ensuring compatibility and efficient signal transmission with most systems.

Minimum Operating Frequency: 865 MHz

The minimum operating frequency of 865 MHz allows for high-performance communication in the UHF band, ideal for various wireless applications.

Maximum Operating Frequency: 928 MHz

With a maximum operating frequency of 928 MHz, this antenna covers a broad range of frequencies, suitable for diverse RF and microwave systems.

Technical Specifications

RF/Microwave Antennas SPSPRDA2-P attributes and parameters. Explore more RF/Microwave Antennas devices from Onsemi

Specs

Characteristic Impedance:

50 ohm

Construction:

COAXIAL

No. of Elements:

1

No. of Terminals:

1

Omni-Directional:

NO

Maximum Operating Frequency:

928 MHz

Minimum Operating Frequency:

865 MHz

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Package Equivalence Code:

MODULE

Polarization:

ELLIPTICAL

RF or Microwave Device Type:

Maximum Voltage Standing Wave Ratio:

2

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

Category top products 20

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