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MCR12DSN-001

Onsemi

MCR12DSN-001 by Onsemi

MCR12DSN-001 by Onsemi is a single SCR with max. on-state current of 12A, DC gate trigger current of 0.2mA, and repetitive peak off-state voltage of 800V. It is used in applications requiring high power control such as motor drives and lighting systems.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 8,706 parts In-Stock

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Digiode

USA . 1,683 parts In-Stock

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1,683

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Distributors (Availability)

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Advanced Electronics

New Zealand . 4,231 parts In-Stock

1+ parts

$5.403

100+ parts

$5.349

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$5.133

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4,231

$5.403

$5.349

$5.133

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AZTECH Wire

Italy . 803 parts In-Stock

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$20.210

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Problanco Electronics

Mexico . 7,635 parts In-Stock

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TANS Electronics

Latvia . 6,175 parts In-Stock

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Corphita

USA . 2,129 parts In-Stock

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2,129

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Kulean Microsystems

USA . 2,076 parts In-Stock

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SupplyDigital Components

Austria . 1,170 parts In-Stock

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UHIMA Technologies

Türkiye . 925 parts In-Stock

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Corohmni

South Africa . 174 parts In-Stock

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Overview

Unlock the power of reliable and efficient electronics with the MCR12DSN-001 by Onsemi. As a leading manufacturer in the industry, Onsemi delivers top-notch quality and performance in their Silicon Controlled Rectifiers (SCR). This versatile product is perfect for a wide range of applications, offering customers the value of durability, precision, and long-lasting functionality. Say goodbye to technical headaches and hello to seamless operation with the MCR12DSN-001.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the components inside, ensuring a longer lifespan for the product.

Maximum DC Gate Trigger Current: 0.2 mA

Allows for precise control and triggering of the SCR, improving overall performance and reliability.

Configuration: SINGLE

Simplified design with no complex connections, making it easier to integrate into various systems.

Repetitive Peak On-state Current: 100 A

Capable of handling high current loads, suitable for heavy-duty applications.

Maximum On-state Current: 12 A

Provides sufficient current-carrying capacity for a wide range of applications.

Repetitive Peak Reverse Voltage: 800 V

Can withstand high reverse voltages, ensuring reliable operation and protection against voltage spikes.

Technical Specifications

Silicon Controlled Rectifiers (SCR) MCR12DSN-001 attributes and parameters. Explore more Silicon Controlled Rectifiers (SCR) devices from Onsemi

Specs

Case Connection:

Configuration:

Minimum Critical Rate of Rise of Off-state Voltage:

2 V/us

Maximum DC Gate Trigger Current:

.2 mA

Maximum DC Gate Trigger Voltage:

1 V

Maximum Holding Current:

10 mA

JESD-30 Code:

R-PSIP-T3

JESD-609 Code:

e0

Maximum Leakage Current:

.5 mA

Moisture Sensitivity Level (MSL):

1

Non Repetitive Peak On-state Current:

100 A

No. of Elements:

1

No. of Terminals:

3

Maximum On-state Current:

12 A

Maximum Operating Temperature:

110 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

Peak Reflow Temperature (C):

235

Qualification:

Not Qualified

Maximum RMS On-state Current:

12 A

Repetitive Peak Off-state Voltage:

800 V

Repetitive Peak Reverse Voltage:

800 V

Sub-Category:

Silicon Controlled Rectifiers

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

Trigger Device Type:

SCR

Trade Compliance

MCR12DSN-001 Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.30.00.80

SB

8541.30.00.80

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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