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MCR100-6RLG

Onsemi

MCR100-6RLG by Onsemi

MCR100-6RLG by Onsemi is a single SCR with max. on-state current of 0.8A and non-repetitive peak on-state current of 10A. It operates b/w -40 to 110 °C, ideal for applications requiring a trigger device with a max RMS on-state current of 0.8A such as power control circuits.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

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Vyrian

USA . 2,104 parts In-Stock

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Digiode

USA . 1,741 parts In-Stock

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Cogito LLC

Ukraine . 69 parts In-Stock

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AZTECH Wire

Italy . 195 parts In-Stock

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$10.700

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Component Stockers USA

USA . 584 parts In-Stock

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$99.990

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Perfect Parts

USA . 11,393 parts In-Stock

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Problanco Electronics

Mexico . 6,496 parts In-Stock

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Kulean Microsystems

USA . 4,577 parts In-Stock

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SupplyDigital Components

Austria . 3,303 parts In-Stock

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Corphita

USA . 1,284 parts In-Stock

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TANS Electronics

Latvia . 260 parts In-Stock

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Corohmni

South Africa . 245 parts In-Stock

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UHIMA Technologies

Türkiye . 112 parts In-Stock

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Overview

Discover the power of the MCR100-6RLG by Onsemi, a top-quality Silicon Controlled Rectifier that offers reliable performance and unmatched durability. Manufactured by Onsemi, a trusted leader in the industry, this SCR is perfect for a wide range of applications. With a maximum DC Gate Trigger Current of 0.2 mA and a Non Repetitive Peak On-state Current of 10 A, this product ensures seamless operation and efficiency. Experience the value and benefits of the MCR100-6RLG, providing customers with superior performance and peace of mind. Choose Onsemi for quality you can trust.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy material provides durability and protection for the SCR, ensuring a longer lifespan.

Maximum DC Gate Trigger Current: 0.2 mA

Low gate trigger current allows for efficient control of the SCR, making it suitable for various applications.

Configuration: SINGLE

Single configuration simplifies installation and usage of the SCR.

Non Repetitive Peak On-state Current: 10 A

High on-state current capacity means the SCR can handle heavy loads without any issues.

Maximum On-state Current: 0.8 A

Capable of handling moderate current loads, making it versatile for different types of circuits.

Repetitive Peak Reverse Voltage: 400 V

High reverse voltage tolerance allows the SCR to be used in circuits with varying voltage levels.

Maximum Operating Temperature: 110 °C

Wide operating temperature range makes the SCR suitable for use in different environmental conditions.

Trigger Device Type: SCR

Being an SCR ensures reliable switching performance and longevity of the device.

Technical Specifications

Silicon Controlled Rectifiers (SCR) MCR100-6RLG attributes and parameters. Explore more Silicon Controlled Rectifiers (SCR) devices from Onsemi

Specs

Configuration:

Minimum Critical Rate of Rise of Off-state Voltage:

20 V/us

Maximum DC Gate Trigger Current:

.2 mA

Maximum DC Gate Trigger Voltage:

1.2 V

Maximum Holding Current:

10 mA

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e1

Maximum Leakage Current:

.1 mA

Non Repetitive Peak On-state Current:

10 A

No. of Elements:

1

No. of Terminals:

3

Maximum On-state Current:

.8 A

Maximum Operating Temperature:

110 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

Peak Reflow Temperature (C):

260

Qualification:

Not Qualified

Maximum RMS On-state Current:

.8 A

Repetitive Peak Off-state Voltage:

400 V

Repetitive Peak Reverse Voltage:

400 V

Sub-Category:

Silicon Controlled Rectifiers

Surface Mount:

NO

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

THROUGH-HOLE

Terminal Position:

Trigger Device Type:

SCR

Trade Compliance

MCR100-6RLG Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.30.00.80

SB

8541.30.00.80

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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