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MC74LVXT8053DTR2

Onsemi

MC74LVXT8053DTR2 by Onsemi

MC74LVXT8053DTR2 by Onsemi is a CMOS multiplexer with 3 functions, operating at -55 to 125 °C. It has a max on-state resistance of 50 ohm and off-state isolation of 37 dB. Ideal for military-grade applications requiring low power consumption and high performance in compact designs.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 8,259 parts In-Stock

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Digiode

USA . 1,589 parts In-Stock

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AZTECH Wire

Italy . 1,195 parts In-Stock

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SupplyDigital Components

Austria . 7,122 parts In-Stock

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Kulean Microsystems

USA . 6,913 parts In-Stock

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Microchip USA

USA . 3,716 parts In-Stock

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Problanco Electronics

Mexico . 2,886 parts In-Stock

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TANS Electronics

Latvia . 2,199 parts In-Stock

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Corphita

USA . 1,503 parts In-Stock

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Corohmni

South Africa . 323 parts In-Stock

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UHIMA Technologies

Türkiye . 92 parts In-Stock

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Overview

Enhance your electronic designs with the MC74LVXT8053DTR2 by Onsemi, a high-quality multiplexer that offers exceptional performance and reliability. Manufactured by Onsemi, a trusted name in the industry, this product is perfect for a wide range of applications in the field of electronics. With its advanced technology and innovative features, the MC74LVXT8053DTR2 provides customers with unmatched value and benefits, making it the ideal choice for all their switching needs. Trust Onsemi to deliver top-notch products that exceed expectations and elevate your projects to the next level.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material provides durability and protection to the product, making it suitable for various environments.

Surface Mount: YES

Being surface mountable makes the product easy to install and saves space on a PCB, contributing to a more efficient design.

No. of Functions: 3

Having multiple functions in one device can simplify circuit designs and reduce the need for additional components, enhancing overall efficiency.

Nominal Supply Voltage (Vsup): 3 V

The nominal supply voltage of 3V is common and compatible with many systems, ensuring easy integration with existing setups.

Maximum Operating Temperature: 125 °C

The high maximum operating temperature allows the product to withstand harsh environmental conditions and ensures reliable performance in various applications.

Technology: CMOS

CMOS technology offers low power consumption and high noise immunity, making the product energy-efficient and reliable for long-term use.

Maximum On-state Resistance (Ron): 50 ohm

Having a low on-state resistance minimizes signal loss and distortion, leading to better signal quality and overall performance of the product.

No. of Channels: 2

Having multiple channels allows for simultaneous switching or multiplexing of different signals, increasing the versatility and functionality of the product.

Technical Specifications

Multiplexers & Switches MC74LVXT8053DTR2 attributes and parameters. Explore more Multiplexers & Switches devices from Onsemi

Specs

Other IC type:

JESD-30 Code:

R-PDSO-G16

JESD-609 Code:

e4

Length:

5 mm

Moisture Sensitivity Level (MSL):

1

No. of Channels:

2

No. of Functions:

3

No. of Terminals:

16

Nominal Off-state Isolation:

37 dB

Nominal On-state Resistance Match:

25 ohm

Maximum On-state Resistance (Ron):

50 ohm

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSSOP16,.25

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

Peak Reflow Temperature (C):

260

Power Supplies (V):

2/6

Qualification:

Not Qualified

Maximum Seated Height:

1.2 mm

Maximum Signal Current:

.02 A

Sub-Category:

Multiplexer or Switches

Maximum Supply Current (Isup):

.16 mA

Maximum Supply Voltage (Vsup):

6 V

Minimum Supply Voltage (Vsup):

2 V

Nominal Supply Voltage (Vsup):

3 V

Surface Mount:

YES

Maximum Switch-off Time:

30 ns

Maximum Switch-on Time:

15 ns

Technology:

CMOS

Temperature Grade:

Terminal Finish:

Nickel/Palladium/Gold (Ni/Pd/Au)

Terminal Form:

GULL WING

Terminal Pitch:

.65 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

40

Width (mm):

4.4 mm

Trade Compliance

MC74LVXT8053DTR2 Other Function Semiconductors trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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