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MC74HCT4852ADG

Onsemi

MC74HCT4852ADG by Onsemi

MC74HCT4852ADG by Onsemi is a CMOS dual multiplexer with 4 channels. It operates at a supply voltage range of 4.5V to 5.5V and has a max on-state resistance of 550 ohm. Ideal for military-grade applications requiring fast switching times and low power consumption.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 5,452 parts In-Stock

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Digiode

USA . 1,195 parts In-Stock

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AZTECH Wire

Italy . 868 parts In-Stock

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TANS Electronics

Latvia . 6,278 parts In-Stock

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Problanco Electronics

Mexico . 4,218 parts In-Stock

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Kulean Microsystems

USA . 2,695 parts In-Stock

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UHIMA Technologies

Türkiye . 842 parts In-Stock

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842

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Microchip USA

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Corphita

USA . 271 parts In-Stock

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Corohmni

South Africa . 150 parts In-Stock

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SupplyDigital Components

Austria . 115 parts In-Stock

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Overview

Discover the MC74HCT4852ADG by Onsemi, a top-of-the-line multiplexer & switch designed to deliver unmatched performance and reliability. With a commitment to quality and innovation, Onsemi ensures that this product meets the highest industry standards. Ideal for a wide range of applications, this versatile device offers customers seamless functionality and superior value. Experience the benefits of seamless switching capabilities and efficient performance with the MC74HCT4852ADG - your solution for all your multiplexing needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic material helps in reducing weight and cost of the product while providing good durability.

Surface Mount: YES

SMT technology allows for more efficient and automated assembly processes, saving time and cost.

No. of Functions: 2

Having multiple functions in one device increases functionality and saves space on the PCB.

Nominal Supply Voltage (Vsup): 5 V

Operates at a standard voltage level, making it compatible with many systems.

Maximum Operating Temperature: 125 °C

Capable of operating in high temperature environments, suitable for a variety of applications.

Technology: CMOS

CMOS technology provides low power consumption and high noise immunity, improving overall performance.

Maximum Signal Current: 0.025 A

Can handle moderate signal currents, suitable for a wide range of signal switching applications.

Technical Specifications

Multiplexers & Switches MC74HCT4852ADG attributes and parameters. Explore more Multiplexers & Switches devices from Onsemi

Specs

Other IC type:

JESD-30 Code:

R-PDSO-G16

JESD-609 Code:

e3

Length:

10.3 mm

Moisture Sensitivity Level (MSL):

1

No. of Channels:

4

No. of Functions:

2

No. of Terminals:

16

Nominal On-state Resistance Match:

80 ohm

Maximum On-state Resistance (Ron):

550 ohm

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

SOP

Package Equivalence Code:

SOP16,.25

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Power Supplies (V):

5

Qualification:

Not Qualified

Maximum Seated Height:

2.65 mm

Maximum Signal Current:

.025 A

Sub-Category:

Multiplexer or Switches

Maximum Supply Current (Isup):

.04 mA

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

4.5 V

Nominal Supply Voltage (Vsup):

5 V

Surface Mount:

YES

Maximum Switch-off Time:

40 ns

Maximum Switch-on Time:

40 ns

Technology:

CMOS

Temperature Grade:

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Width (mm):

7.5 mm

Trade Compliance

MC74HCT4852ADG Other Function Semiconductors trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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