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MC3302DR2

Onsemi

MC3302DR2 by Onsemi

MC3302DR2 by Onsemi is a comparator with 4 functions, 1uA bias current, and 40mV input offset voltage. It operates at -40 to 85 °C and has a response time of 1300ns. Ideal for industrial applications requiring precise voltage comparisons in compact designs.

Median Price

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Lifecycle Status

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5

In-Stock Inventory

1k+

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Vyrian

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Inland Empire Components Inc.

USA . 2,441 parts In-Stock

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Digiode

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Semi Source

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ComSIT Distribution GmbH

Germany . 435 parts In-Stock

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AZTECH Wire

Italy . 183 parts In-Stock

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Lixinc

USA . 13,372 parts In-Stock

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Kepictronics

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SupplyDigital Components

Austria . 5,605 parts In-Stock

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Microchip USA

USA . 4,777 parts In-Stock

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TANS Electronics

Latvia . 4,078 parts In-Stock

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Problanco Electronics

Mexico . 3,363 parts In-Stock

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Corphita

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Perfect Parts

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Kulean Microsystems

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GreenTree Electronics

Israel . 807 parts In-Stock

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UHIMA Technologies

Türkiye . 372 parts In-Stock

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Corohmni

South Africa . 266 parts In-Stock

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Overview

Discover the unparalleled performance and reliability of the MC3302DR2 by Onsemi. As a top-tier manufacturer in the industry, Onsemi ensures superior quality and precision engineering in every product. The MC3302DR2, classified under comparators, boasts a wide range of applications with its advanced features and functionalities. Customers can expect excellent value and benefits from this product, including fast response times, low bias current, and a compact package design. Trust Onsemi to deliver innovative solutions that exceed expectations.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material is durable and lightweight, making the product easy to handle and suitable for various applications.

Maximum Input Offset Voltage: 40000 uV

High input offset voltage allows for precise measurements and accurate comparisons between input signals.

Maximum Average Bias Current (IIB): 1 uA

Low bias current helps in reducing power consumption and ensures reliable performance over time.

Surface Mount: YES

Surface mount capability makes it easy to integrate into electronic circuit boards, saving space and simplifying assembly.

No. of Functions: 4

Having multiple functions in one component can streamline circuit design and reduce the need for additional components.

Nominal Supply Voltage / Vsup (V): 5

Operating at a nominal supply voltage of 5V makes it compatible with standard power sources and logic levels.

Maximum Operating Temperature: 85 °C

With a high maximum operating temperature, this product can perform reliably in a wide range of environments.

Output Type: OPEN-COLLECTOR

The open-collector output allows for easy interfacing with other devices and provides flexibility in circuit design.

Nominal Response Time: 1300 ns

Fast response time ensures quick decision-making and accurate signal processing in dynamic applications.

Technology: BIPOLAR

Bipolar technology offers high precision and low noise, making this product ideal for critical comparator applications.

Technical Specifications

Comparators MC3302DR2 attributes and parameters. Explore more Comparators devices from Onsemi

Amplifier Characteristics

Amplifier Type:

Technology:

BIPOLAR

Power Supply:

5 V

Total Functions:

4

Sub-Category:

Comparators

Output Type:

Open-Collector

Performance Specifications

Maximum Input Offset Voltage:

40 mV

Peak Bias Current:

1 uA

Maximum Bias Current (IIB) @25 °C:

500 nA

Operational Characteristics

Maximum Supply Current:

2.5 mA

Nominal Supply Voltage:

5 V

Maximum Supply Voltage:

30 V

Nominal Negative Supply Voltage (Vsup):

0 V

Maximum Negative Supply Voltage:

0 V

Lowest Operating Temperature:

-40 °C (-40 °F)

Maximum Operating Temperature:

85 °C (185 °F)

Peak Reflow Temperature:

235 °C (455 °F)

Nominal Response Time:

1.3 µs

Physical Characteristics

Length:

0.341 in (8.65 mm)

Width:

0.154 in (3.9 mm)

Maximum Seated Height:

0.069 in (1.75 mm)

Total Terminals:

14

Terminal Pitch:

0.05 in (1.27 mm)

Terminal Position:

Dual

Terminal Form:

Terminal Finish:

Tin Lead

Package Body Material:

Plastic/Epoxy

Surface Mount:

Yes

Manufacturing and Reliability

Moisture Sensitivity Level (MSL):

1

Temperature Grade:

Qualified:

No

Standards

JESD-30 Code:

R-PDSO-G14

JESD-609 Code:

e0

Packaging and Shipping

Package Code:

SOP

Package Shape:

Package Type:

Small Outline

Package Equivalence Code:

SOP14,.25

Trade Compliance

MC3302DR2 Amplifiers trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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