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MC1403BDR2G

Onsemi

MC1403BDR2G by Onsemi

MC1403BDR2G by Onsemi is a voltage reference IC with 2.5V output, ±1% voltage tolerance, and 40ppm/°C max temp coef. It operates in industrial temperature range (-40 to 85 °C) and suits applications requiring precise voltage references in compact designs.

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3

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1k+

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Vyrian

USA . 3,162 parts In-Stock

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Digiode

USA . 1,470 parts In-Stock

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Benley Electronics

USA . 8 parts In-Stock

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$0.750

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8

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AZTECH Wire

Italy . 571 parts In-Stock

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$8.770

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Advanced Electronics

New Zealand . 45 parts In-Stock

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$13.896

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$12.645

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$11.395

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Component Stockers USA

USA . 556 parts In-Stock

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$99.990

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QUARKTWIN TECHNOLOGY LTD

USA . 16,741 parts In-Stock

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Authorized Procurement Solutions

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Metaverse IC Inc.

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TANS Electronics

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SupplyDigital Components

Austria . 7,366 parts In-Stock

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Kulean Microsystems

USA . 5,630 parts In-Stock

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Microchip USA

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Kepictronics

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Corphita

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UHIMA Technologies

Türkiye . 865 parts In-Stock

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Corohmni

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Problanco Electronics

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Overview

Unlock the power of precision with the MC1403BDR2G voltage reference by Onsemi. Crafted with the highest quality materials and advanced technology, this small outline package offers unmatched reliability and stability for industrial applications. Providing a nominal output voltage of 2.5V with a minimal supply voltage of 4.5V, this three-terminal voltage reference ensures precise performance with a maximum voltage tolerance of 1%. Trust Onsemi to deliver exceptional value and performance with the MC1403BDR2G.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy body material makes the package durable and lightweight, making it suitable for a wide range of applications.

Surface Mount: YES

Being surface mountable enables easy integration into circuit boards, saving space and simplifying assembly.

Nominal Supply Voltage (Vsup): 15 V

The 15V nominal supply voltage provides a stable power source for the voltage reference, ensuring accurate and consistent performance.

Maximum Operating Temperature: 85 °C

With a high maximum operating temperature of 85 °C, this voltage reference can withstand harsh environmental conditions.

Minimum Output Voltage: 2.475 V

The minimum output voltage of 2.475V ensures a precise reference voltage for the connected circuitry.

Minimum Operating Temperature: -40 °C

The low minimum operating temperature of -40 °C allows the voltage reference to function reliably in cold environments.

Maximum Output Voltage: 2.525 V

The maximum output voltage of 2.525V provides a tight voltage range for accurate reference voltage generation.

Maximum Seated Height: 1.75 mm

The low maximum seated height of 1.75mm allows for compact and space-saving designs in electronic applications.

Temperature Grade: INDUSTRIAL

The industrial temperature grade ensures that the voltage reference can operate reliably in industrial settings with varying temperature conditions.

Technology: BIPOLAR

The bipolar technology used in this voltage reference offers high precision and stability, making it ideal for critical voltage reference applications.

Technical Specifications

Voltage References MC1403BDR2G attributes and parameters. Explore more Voltage References devices from Onsemi

Specs

JESD-30 Code:

R-PDSO-G8

JESD-609 Code:

e3

Length:

4.9 mm

Moisture Sensitivity Level (MSL):

1

No. of Functions:

1

No. of Outputs:

1

No. of Terminals:

8

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Maximum Output Voltage:

2.525 V

Minimum Output Voltage:

2.475 V

Nominal Output Voltage:

2.5 V

Package Body Material:

PLASTIC/EPOXY

Package Code:

SOP

Package Equivalence Code:

SOP8,.25

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Qualification:

Not Qualified

Maximum Seated Height:

1.75 mm

Sub-Category:

Voltage References

Maximum Supply Voltage (Vsup):

40 V

Minimum Supply Voltage (Vsup):

4.5 V

Nominal Supply Voltage (Vsup):

15 V

Surface Mount:

YES

Technology:

BIPOLAR

Max Voltage Temp Coef:

40 ppm/Cel

Temperature Grade:

Terminal Finish:

TIN

Terminal Form:

GULL WING

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Trim or Adjustable Output (V):

NO

Maximum Voltage Tolerance:

1 %

Width (mm):

3.9 mm

Trade Compliance

MC1403BDR2G Other Function Semiconductors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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