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MBR140SFT3

Onsemi

MBR140SFT3 by Onsemi

MBR140SFT3 by Onsemi is a Schottky rectifier diode with a max forward voltage of 0.3V and output current of 1A. It operates b/w -55°C to 125°C, has a peak reflow temperature of 260°C, and can handle up to 40V reverse voltage. This diode is ideal for applications requiring high-speed switching and low power loss in compact electronic devices.

Median Price

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Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

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Chip Stock

USA . 14,000 parts In-Stock

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Vyrian

USA . 2,954 parts In-Stock

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Digiode

USA . 2,195 parts In-Stock

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Nova Conductors

Japan . 400 parts In-Stock

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400

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Aztec Data Supply Inc.

USA . 2,418 parts In-Stock

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$0.090

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2,418

$0.090

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Advanced Electronics

New Zealand . 150 parts In-Stock

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$0.145

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$0.138

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$0.138

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150

$0.145

$0.138

$0.138

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Ampacity Inc.

Singapore . 875 parts In-Stock

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$1.010

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875

$1.010

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Semicontronic

India . 1,198 parts In-Stock

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$3.010

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$2.935

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$2.920

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$3.010

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AZTECH Wire

Italy . 743 parts In-Stock

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$16.172

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Kepictronics

USA . 30,000 parts In-Stock

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Kulean Microsystems

USA . 6,705 parts In-Stock

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Argo Parts USA

USA . 4,644 parts In-Stock

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SupplyDigital Components

Austria . 3,631 parts In-Stock

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Corphita

USA . 1,864 parts In-Stock

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TANS Electronics

Latvia . 1,302 parts In-Stock

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Problanco Electronics

Mexico . 698 parts In-Stock

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Bastille Electronics

Australia . 300 parts In-Stock

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UHIMA Technologies

Türkiye . 107 parts In-Stock

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Corohmni

South Africa . 65 parts In-Stock

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Continental Prestige Electronics

USA . 34 parts In-Stock

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Overview

Discover the superior quality and performance of the MBR140SFT3 diode by Onsemi. With a reputation for excellence in manufacturing, Onsemi delivers a reliable product that exceeds industry standards. This small outline rectifier diode is perfect for a wide range of applications, offering a maximum forward voltage of 0.3V and a maximum output current of 1A. Whether you're working on power supplies, battery chargers, or LED lighting, this Schottky technology diode provides efficiency and reliability. Experience the value and benefits of choosing Onsemi for your electronic component needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material ensures durability and protection for the diode, making it a reliable choice for various applications.

Config: SINGLE

The single configuration simplifies installation and use, providing ease of integration into electronic circuits.

Surface Mount: YES

With surface mount capability, this diode is space-efficient and suitable for compact electronic designs.

Package Shape: RECTANGULAR

The rectangular shape allows for efficient placement on PCBs and ensures a secure fit during assembly.

No. of Terminals: 2

With two terminals, this diode offers straightforward connectivity and versatility in circuit design.

Package Style (Meter): SMALL OUTLINE

The small outline package style saves space and facilitates a neat layout in electronic devices.

Maximum Operating Temperature: 125 °C

This high operating temperature range ensures reliable performance even in harsh environmental conditions.

Minimum Operating Temperature: -55 °C

The low minimum operating temperature makes this diode suitable for a wide range of temperature environments.

Terminal Finish: TIN

The tin terminal finish provides corrosion resistance and good electrical conductivity for optimal performance.

Terminal Position: DUAL

With dual terminal positions, this diode offers flexibility in mounting options and connectivity arrangements.

Maximum Time At Peak Reflow Temperature (s): 30

This diode can withstand peak reflow temperatures for up to 30 seconds, ensuring secure soldering during assembly.

Peak Reflow Temperature °C: 260

The high peak reflow temperature capacity ensures reliable solder joints and secure connections in the application.

Diode Type: RECTIFIER DIODE

As a rectifier diode, this product is specifically designed for converting AC to DC power efficiently and effectively.

Maximum Forward Voltage (VF): 0.3 V

The low forward voltage drop of 0.3V minimizes power loss and enhances the energy efficiency of the circuit.

Maximum Output Current: 1 A

With a maximum output current of 1A, this diode is suitable for handling moderate power loads in various applications.

Technology: SCHOTTKY

The Schottky technology used in this diode offers fast switching speeds and low voltage drops, enhancing performance efficiency.

Terminal Form: FLAT

The flat terminal form ensures secure connections and easy soldering during the assembly process.

Maximum Repetitive Peak Reverse Voltage: 40 V

The high repetitive peak reverse voltage rating of 40V provides protection against voltage spikes and surges in the circuit.

Maximum Non Repetitive Peak Forward Current: 30 A

With a maximum non-repetitive peak forward current of 30A, this diode can handle short-term high current surges effectively.

Diode Element Material: SILICON

The silicon diode element material offers high efficiency and reliability in converting and regulating electrical currents.

Technical Specifications

Diodes & Rectifiers MBR140SFT3 attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Additional Features:

FREE WHEELING DIODE

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.3 V

JESD-30 Code:

R-PDSO-F2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

30 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Maximum Output Current:

1 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

40 V

Sub-Category:

Rectifier Diodes

Surface Mount:

YES

Technology:

SCHOTTKY

Terminal Finish:

TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

MBR140SFT3 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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