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MBR140SFT1

Onsemi

MBR140SFT1 by Onsemi

MBR140SFT1 by Onsemi is a Schottky rectifier diode with a max forward voltage of 0.3V and output current of 1A. It operates b/w -55 to 125°C, ideal for applications requiring high-speed switching and low power loss in compact electronic devices. The package style is small outline, making it suitable for surface mount designs in various industries.

Median Price

$0.196

Lifecycle Status

Suppliers In-Stock

11

In-Stock Inventory

1k+

Distributors (In-Stock)

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Freelance Electronics

USA . 10 parts In-Stock

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$0.196

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Chip Stock

USA . 102,500 parts In-Stock

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Vyrian

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Digiode

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Bristol Electronics

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Atlantic Semiconductor

USA . 1,436 parts In-Stock

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AGACORP

USA . 1,000 parts In-Stock

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Cyclops Electronics Ltd

UK . 131 parts In-Stock

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Nova Conductors

Japan . 100 parts In-Stock

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ACDS - Activité Composants Distribution Service

France . 10 parts In-Stock

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Holdelec - ElecDif-Pro

France . 10 parts In-Stock

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Distributors (Availability)

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Advanced Electronics

New Zealand . 100 parts In-Stock

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$0.058

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$0.055

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$0.055

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Aztec Data Supply Inc.

USA . 4,323 parts In-Stock

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$0.060

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Corohmni

South Africa . 309 parts In-Stock

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Semicontronic

India . 1,550 parts In-Stock

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$2.010

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$1.960

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$1.950

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Ampacity Inc.

Singapore . 449 parts In-Stock

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AZTECH Wire

Italy . 332 parts In-Stock

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Kepictronics

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Lixinc

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Kulean Microsystems

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Problanco Electronics

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TANS Electronics

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Argo Parts USA

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Assy Fe

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SupplyDigital Components

Austria . 976 parts In-Stock

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Continental Prestige Electronics

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Corphita

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Bastille Electronics

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UHIMA Technologies

Türkiye . 484 parts In-Stock

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Overview

Elevate your electronics with the MBR140SFT1 by Onsemi, a top-quality rectifier diode that offers unmatched performance and reliability. Manufactured by Onsemi, a trusted leader in the industry, this diode is ideal for a variety of applications. With a small outline package style and dual terminals, this diode is easy to install and versatile to use. The Schottky technology ensures efficient power conversion with a low forward voltage of only 0.3V and a maximum output current of 1A. Trust Onsemi for all your diode needs and experience the difference in quality and performance.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy package body material ensures durability and protection for the diode, making it suitable for a variety of applications.

Maximum Operating Temperature: 125 °C

With a high maximum operating temperature of 125 °C, this diode can withstand high temperature environments without any performance issues.

Technology: SCHOTTKY

The Schottky technology used in this diode allows for low forward voltage drop and fast switching, making it ideal for applications where efficiency is important.

Maximum Output Current: 1 A

With a maximum output current of 1 A, this diode can handle moderate to high current loads, making it versatile for various electronic circuits.

Technical Specifications

Diodes & Rectifiers MBR140SFT1 attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Additional Features:

FREE WHEELING DIODE

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.3 V

JESD-30 Code:

R-PDSO-F2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

30 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Maximum Output Current:

1 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

40 V

Sub-Category:

Rectifier Diodes

Surface Mount:

YES

Technology:

SCHOTTKY

Terminal Finish:

TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

MBR140SFT1 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

NSN

5961-01-616-6710, 5961016166710

NIIN

016166710

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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