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MBR120LSFT1

Onsemi

MBR120LSFT1 by Onsemi

MBR120LSFT1 by Onsemi is a Schottky rectifier diode with a max forward voltage of 0.26V and output current of 1A. It operates at a max temperature of 125 °C, making it suitable for applications requiring high efficiency and low power loss in compact electronic devices. The diode's small outline package shape and surface mount capability enhance its versatility in various circuit designs.

Median Price

$0.114

Lifecycle Status

Suppliers In-Stock

14

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 5,503 parts In-Stock

1+ parts

-

100+ parts

$0.119

1k+ parts

$0.099

10k+ parts

$0.088

5,503

-

$0.119

$0.099

$0.088

Verical

USA . 5,503 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

$0.110

5,503

-

-

-

$0.110

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 1,340 parts In-Stock

1+ parts

$0.093

100+ parts

-

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1,340

$0.093

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Component Electronics Inc.

Canada . 2,850 parts In-Stock

1+ parts

$0.540

100+ parts

$0.400

1k+ parts

$0.350

10k+ parts

-

2,850

$0.540

$0.400

$0.350

-

Chip Stock

USA . 75,600 parts In-Stock

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75,600

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Zilex Electronics Inc.

Canada . 13,634 parts In-Stock

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13,634

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Vyrian

USA . 7,199 parts In-Stock

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7,199

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Bristol Electronics

USA . 4,296 parts In-Stock

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4,296

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PC Components Company LLC

USA . 2,532 parts In-Stock

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2,532

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ACDS - Activité Composants Distribution Service

France . 2,461 parts In-Stock

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2,461

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R&J Components

USA . 1,923 parts In-Stock

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1,923

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Microfarads

USA . 1,857 parts In-Stock

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1,857

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Inventory MP

USA . 1,764 parts In-Stock

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1,764

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Mil-Aero Solutions, Inc.

USA . 300 parts In-Stock

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300

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Distributors (Availability)

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Corphita

USA . 940 parts In-Stock

1+ parts

$0.088

100+ parts

-

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940

$0.088

-

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Corohmni

South Africa . 62 parts In-Stock

1+ parts

$0.098

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62

$0.098

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AZTECH Wire

Italy . 214 parts In-Stock

1+ parts

$12.710

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214

$12.710

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Kepictronics

USA . 62,000 parts In-Stock

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62,000

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TANS Electronics

Latvia . 7,704 parts In-Stock

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7,704

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Perfect Parts

USA . 5,513 parts In-Stock

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5,513

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SupplyDigital Components

Austria . 4,872 parts In-Stock

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4,872

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Authorized Procurement Solutions

USA . 3,000 parts In-Stock

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3,000

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Kulean Microsystems

USA . 2,830 parts In-Stock

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2,830

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Assy Fe

Spain . 2,600 parts In-Stock

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2,600

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Cyclops Electronics Ltd (Excess)

UK . 2,461 parts In-Stock

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2,461

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Problanco Electronics

Mexico . 1,859 parts In-Stock

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UHIMA Technologies

Türkiye . 449 parts In-Stock

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449

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Overview

Enhance your electronic designs with the MBR120LSFT1 by Onsemi. As a leading manufacturer in the industry, Onsemi ensures top-quality products that meet the highest standards. This Schottky rectifier diode offers exceptional performance and reliability, making it ideal for a wide range of applications. With a maximum forward voltage of 0.26V and output current of 1A, this diode is perfect for various projects requiring efficient power management. Trust Onsemi to deliver cutting-edge technology that provides value and benefits to you and your customers.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good insulation and protection for the diode, ensuring reliability and longevity.

Config: SINGLE

Simplifies installation and circuit design, making it easy to integrate into various applications.

Surface Mount: YES

Allows for efficient and compact PCB layout, saving space and facilitating automated assembly.

Package Shape: RECTANGULAR

Enhances the ease of placement and orientation during assembly, reducing errors and improving efficiency.

No. of Terminals: 2

Streamlines connection and soldering process, making it convenient for circuit integration.

Package Style (Meter): SMALL OUTLINE

Fits well in limited spaces, enabling compact designs and reducing overall system size.

Maximum Operating Temperature: 125 °C

Ensures stable performance even in demanding environments, enhancing the diode's reliability.

Terminal Finish: TIN

Provides good conductivity and solderability, ensuring secure connections and consistent performance.

Terminal Position: DUAL

Enables versatile mounting options, allowing for flexibility in circuit layout and integration.

Maximum Time At Peak Reflow Temperature (s): 30

Facilitates efficient soldering process during assembly, saving time and ensuring proper connections.

Peak Reflow Temperature °C: 260

Allows for high-temperature soldering, ensuring strong and reliable connections for the diode.

Diode Type: RECTIFIER DIODE

Designed specifically for rectification applications, ensuring efficient conversion of AC to DC voltage.

Maximum Forward Voltage (VF): 0.26 V

Low forward voltage drop minimizes power loss and improves efficiency in the circuit.

Maximum Output Current: 1 A

Capable of handling moderate current loads, making it suitable for a wide range of power applications.

Technology: SCHOTTKY

Schottky diode technology provides fast switching speed and low forward voltage, enhancing overall performance.

Terminal Form: FLAT

Simplifies soldering process and ensures secure connections, contributing to overall reliability.

Maximum Repetitive Peak Reverse Voltage: 20 V

Withstands high reverse voltage levels, providing protection and reliability in the circuit.

Maximum Non Repetitive Peak Forward Current: 50 A

Capable of handling short-duration high current spikes, ensuring robust performance in transient conditions.

Diode Element Material: SILICON

Silicon diodes offer good thermal stability and efficiency, suitable for a wide range of applications.

Technical Specifications

Diodes & Rectifiers MBR120LSFT1 attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Additional Features:

FREE WHEELING DIODE

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.26 V

JESD-30 Code:

R-PDSO-F2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

50 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

125 Cel

Maximum Output Current:

1 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

20 V

Sub-Category:

Rectifier Diodes

Surface Mount:

YES

Technology:

SCHOTTKY

Terminal Finish:

TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

MBR120LSFT1 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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