Loading...

MBR120ESFT3

Onsemi

MBR120ESFT3 by Onsemi

MBR120ESFT3 by Onsemi is a Schottky rectifier diode with a max forward voltage of 0.36V and output current of 1A. It operates b/w -65 °C to 150°C, making it suitable for applications requiring high efficiency power conversion in small outline packages. The diode's peak non-repetitive forward current is 40A, ideal for various electronic circuits.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 2,678 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,678

-

-

-

-

Digiode

USA . 1,977 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,977

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

AZTECH Wire

Italy . 774 parts In-Stock

1+ parts

$16.070

100+ parts

-

1k+ parts

-

10k+ parts

-

774

$16.070

-

-

-

SupplyDigital Components

Austria . 8,082 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

8,082

-

-

-

-

TANS Electronics

Latvia . 7,560 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

7,560

-

-

-

-

Problanco Electronics

Mexico . 7,102 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

7,102

-

-

-

-

Kulean Microsystems

USA . 5,395 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

5,395

-

-

-

-

Corphita

USA . 948 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

948

-

-

-

-

Corohmni

South Africa . 446 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

446

-

-

-

-

UHIMA Technologies

Türkiye . 417 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

417

-

-

-

-

Overview

Discover the superior quality and performance of the MBR120ESFT3 by Onsemi. As a leading manufacturer in the industry of Diodes & Rectifiers, Onsemi delivers exceptional products with cutting-edge technology. The MBR120ESFT3 is a Schottky rectifier diode that offers a maximum output current of 1A and a maximum repetitive peak reverse voltage of 20V, making it perfect for a wide range of applications. With its small outline package style and dual terminal position, this diode provides reliability and efficiency while ensuring optimal performance. Trust Onsemi to provide you with a high-quality product that meets your needs and exceeds your expectations.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material is lightweight and durable, making the product suitable for various applications. It also provides good insulation and protection for the diode.

Surface Mount: YES

The surface mount feature allows for easy and efficient installation on PCBs, saving space and enabling automated assembly processes.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature, this diode can withstand harsh environmental conditions and high temperature applications, ensuring reliable performance.

Diode Type: RECTIFIER DIODE

Rectifier diodes are ideal for converting alternating current (AC) to direct current (DC), making this product a good choice for power supply applications.

Maximum Output Current: 1 A

The high output current rating ensures that the diode can handle high power loads without overheating, providing stable and efficient operation.

Technology: SCHOTTKY

Schottky diodes have low forward voltage drop and fast switching speeds, making them suitable for high frequency and high efficiency applications.

Maximum Repetitive Peak Reverse Voltage: 20 V

With a high reverse voltage rating, this diode can withstand reverse voltage spikes and surges, protecting the circuit from damage.

Technical Specifications

Diodes & Rectifiers MBR120ESFT3 attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Additional Features:

FREE WHEELING DIODE

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.36 V

JESD-30 Code:

R-PDSO-F2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

40 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-65 Cel

Maximum Output Current:

1 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

20 V

Sub-Category:

Rectifier Diodes

Surface Mount:

YES

Technology:

SCHOTTKY

Terminal Finish:

TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

MBR120ESFT3 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

previous next
The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.

Similar products 20