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MBR10L60CTG

Onsemi

MBR10L60CTG by Onsemi

MBR10L60CTG by Onsemi is a Schottky rectifier diode with 2 elements, common cathode configuration, and max output current of 5A. It operates b/w -55 to 150 °C, ideal for efficiency applications requiring a max repetitive peak reverse voltage of 60V. The package style is flange mount with matte tin terminal finish.

Median Price

$0.807

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (Authorized)

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Flip Electronics (Authorized)

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Rochester

USA . 40 parts In-Stock

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$0.807

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$0.670

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$0.597

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$0.597

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Digiode

USA . 1,008 parts In-Stock

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$0.629

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Vyrian

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Advanced Electronics

New Zealand . 85 parts In-Stock

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$0.079

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$0.072

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$0.065

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Corphita

USA . 1,033 parts In-Stock

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$0.596

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Corohmni

South Africa . 159 parts In-Stock

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$0.662

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Microchip USA

USA . 297 parts In-Stock

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$9.750

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AZTECH Wire

Italy . 550 parts In-Stock

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Kulean Microsystems

USA . 8,117 parts In-Stock

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TANS Electronics

Latvia . 6,659 parts In-Stock

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Türkiye . 845 parts In-Stock

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Overview

Unlock the power of efficiency with the MBR10L60CTG by Onsemi. This high-quality diode offers unparalleled performance and reliability, thanks to Onsemi's reputation for excellence in manufacturing. Perfect for a wide range of applications, this diode is designed to provide maximum output current and minimum forward voltage, ensuring optimal functionality. Trust Onsemi to deliver top-notch products that exceed expectations and add value to your projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the diodes, ensuring a longer lifespan.

No. of Terminals: 3

Allows for easy installation and connection in circuits.

Maximum Operating Temperature: 150 °C

Can withstand high temperature environments, making it suitable for a variety of applications.

Diode Type: RECTIFIER DIODE

Efficiently converts AC to DC, making it ideal for power supply and conversion applications.

Technology: SCHOTTKY

Provides low forward voltage drop and fast switching, improving overall efficiency.

Maximum Output Current: 5 A

Capable of handling high currents, suitable for various electronic devices and circuits.

Technical Specifications

Diodes & Rectifiers MBR10L60CTG attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Additional Features:

LOW POWER LOSS

Application:

EFFICIENCY

Case Connection:

CATHODE

Config:

COMMON CATHODE, 2 ELEMENTS

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.49 V

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

Maximum Non Repetitive Peak Forward Current:

200 A

No. of Elements:

2

No. of Phases:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Maximum Output Current:

5 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

FLANGE MOUNT

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

60 V

Sub-Category:

Rectifier Diodes

Surface Mount:

NO

Technology:

SCHOTTKY

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Trade Compliance

MBR10L60CTG Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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