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MA3075WALT1

Onsemi

MA3075WALT1 by Onsemi

MA3075WALT1 by Onsemi is a Transient Suppression Device with 2 ELEMENTS in COMMON ANODE config. It has a Max Breakdown Voltage of 7.9 V and operates at up to 150 °C, ideal for ZENER technology applications requiring protection against voltage spikes.

Median Price

$0.062

Lifecycle Status

Suppliers In-Stock

8

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 6,337 parts In-Stock

1+ parts

-

100+ parts

$0.053

1k+ parts

$0.044

10k+ parts

$0.039

6,337

-

$0.053

$0.044

$0.039

DigiKey

USA . 6,337 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

$0.070

6,337

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-

-

$0.070

Distributors (In-Stock)

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Digiode

USA . 2,176 parts In-Stock

1+ parts

$0.041

100+ parts

-

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10k+ parts

-

2,176

$0.041

-

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Bristol Electronics

USA . 1,810 parts In-Stock

1+ parts

$0.285

100+ parts

$0.142

1k+ parts

$0.057

10k+ parts

-

1,810

$0.285

$0.142

$0.057

-

Chip Stock

USA . 75,000 parts In-Stock

1+ parts

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75,000

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Vyrian

USA . 9,724 parts In-Stock

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9,724

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Prism Electronics

USA . 2,804 parts In-Stock

1+ parts

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2,804

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Microfarads

USA . 1,710 parts In-Stock

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1,710

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Distributors (Availability)

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Corphita

USA . 1,870 parts In-Stock

1+ parts

$0.039

100+ parts

-

1k+ parts

-

10k+ parts

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1,870

$0.039

-

-

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Corohmni

South Africa . 462 parts In-Stock

1+ parts

$0.043

100+ parts

-

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462

$0.043

-

-

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Advanced Electronics

New Zealand . 350 parts In-Stock

1+ parts

$0.068

100+ parts

$0.062

1k+ parts

$0.056

10k+ parts

-

350

$0.068

$0.062

$0.056

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AZTECH Wire

Italy . 37 parts In-Stock

1+ parts

$14.810

100+ parts

-

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37

$14.810

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Kepictronics

USA . 21,000 parts In-Stock

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21,000

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SupplyDigital Components

Austria . 8,017 parts In-Stock

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TANS Electronics

Latvia . 5,115 parts In-Stock

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5,115

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A-Z Elektronik GmbH

Germany . 5,025 parts In-Stock

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5,025

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Problanco Electronics

Mexico . 4,856 parts In-Stock

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4,856

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Kulean Microsystems

USA . 4,146 parts In-Stock

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4,146

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Alle Elektronik GmbH

Germany . 3,350 parts In-Stock

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3,350

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Perfect Parts

USA . 3,140 parts In-Stock

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3,140

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Assy Fe

Spain . 1,000 parts In-Stock

1+ parts

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1,000

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UHIMA Technologies

Türkiye . 675 parts In-Stock

1+ parts

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675

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Overview

Experience the superior protection and reliability of the MA3075WALT1 by Onsemi. As a leading manufacturer of Transient Suppression Devices, Onsemi delivers cutting-edge technology in a compact, common anode package. Ideal for a wide range of applications, this product offers customers peace of mind with its high-quality construction, efficient performance, and exceptional value. Trust Onsemi to provide the solutions you need for your electronic devices.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the components inside, ensuring a longer lifespan for the product.

Working Test Current: 5 mA

Ability to handle a working test current of 5 mA makes this product suitable for a variety of electronic circuits and devices.

Maximum Non Repetitive Peak Reverse Power Dissipation: 15 W

High power dissipation capability allows the product to effectively suppress transient voltage spikes and protect connected devices.

Maximum Operating Temperature: 150 °C

Can withstand high operating temperatures, ensuring reliable performance even in challenging environments.

Diode Type: TRANS VOLTAGE SUPPRESSOR DIODE

The use of trans voltage suppressor diodes ensures efficient suppression of transient voltage spikes, enhancing the protection provided by the product.

Technical Specifications

Transient Suppression Devices MA3075WALT1 attributes and parameters. Explore more Transient Suppression Devices devices from Onsemi

Specs

Additional Features:

LOW CAPACITANCE

Maximum Breakdown Voltage:

7.9 V

Minimum Breakdown Voltage:

7.2 V

Config:

COMMON ANODE, 2 ELEMENTS

Diode Element Material:

SILICON

Maximum Dynamic Impedance:

15 ohm

JEDEC-95 Code:

TO-236AB

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e0

Maximum Non Repetitive Peak Reverse Power Dissipation:

15 W

No. of Elements:

2

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

235

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

.225 W

Qualification:

Not Qualified

Nominal Reference Voltage:

7.5 V

Sub-Category:

Voltage Reference Diodes

Surface Mount:

YES

Technology:

ZENER

Terminal Finish:

TIN LEAD

Terminal Form:

Terminal Position:

Maximum Voltage Tolerance:

5.3 %

Working Test Current:

5 mA

Trade Compliance

MA3075WALT1 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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