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LV24250LS

Onsemi

LV24250LS by Onsemi

LV24250LS by Onsemi is a Silicon Tuner IC with 24 terminals in a square chip carrier package. Operating temperature range from -20 to 70 °C, suitable for audio tuner applications. Features BICMOS technology, terminal pitch of 0.4mm, and low supply voltage of 2.6V making it ideal for compact electronic devices.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 1,306 parts In-Stock

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Digiode

USA . 573 parts In-Stock

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TANS Electronics

Latvia . 7,748 parts In-Stock

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Kulean Microsystems

USA . 7,510 parts In-Stock

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Problanco Electronics

Mexico . 7,024 parts In-Stock

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Corphita

USA . 2,029 parts In-Stock

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SupplyDigital Components

Austria . 793 parts In-Stock

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Corohmni

South Africa . 468 parts In-Stock

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UHIMA Technologies

Türkiye . 87 parts In-Stock

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Overview

Unlock a world of premium audio with the LV24250LS Silicon Tuner IC by Onsemi. Known for their top-notch quality and innovative technology, Onsemi delivers cutting-edge solutions in the realm of audio tuner ICs. This surface mount chip carrier with very thin profile is perfect for a wide range of applications. With a minimum supply voltage of 2.6V and a maximum operating temperature of 70 °C, this chip offers exceptional performance and reliability. Elevate your audio experience today with the LV24250LS by Onsemi.

Feature Benefit Bullets

Surface Mount: YES

Allows for easy and efficient installation on circuit boards, saving time and simplifying manufacturing processes.

Package Shape: SQUARE

Square packages offer efficient use of space on circuit boards and provide a more uniform distribution of heat compared to other shapes.

General IC Type: AUDIO TUNER

Specifically designed for audio applications, ensuring high-quality audio performance and compatibility with audio systems.

No. of Terminals: 24

Sufficient number of terminals for connecting to other components in the circuit, providing versatility and flexibility in design.

Package Style (Meter): CHIP CARRIER, VERY THIN PROFILE

Thin profile package design helps in reducing overall space requirements in compact devices while maintaining high performance.

Maximum Operating Temperature: 70 °C

High maximum operating temperature allows for reliable operation even in demanding environments or under extended use.

Minimum Operating Temperature: -20 °C

Low minimum operating temperature ensures functionality in various temperature conditions, making it versatile for different applications.

Terminal Position: QUAD

Quad terminal position provides stable connection points and simplifies the layout of components on the circuit board.

Maximum Seated Height: 0.85 mm

Low profile design with maximum seated height of 0.85 mm allows for compact and space-efficient integration into electronic devices.

Width: 3.5 mm

Slim width of 3.5 mm enables easy placement and mounting on circuit boards without taking up excess space.

Minimum Supply Voltage (Vsup): 2.6 V

Low minimum supply voltage requirement of 2.6 V helps in reducing power consumption and extending battery life in portable devices.

Length: 3.5 mm

Compact length of 3.5 mm makes it suitable for space-constrained applications where size matters.

Technology: BICMOS

Utilizing BiCMOS technology combines the benefits of both bipolar and CMOS technologies, offering high speed and low power consumption.

Terminal Form: NO LEAD

Lead-free terminal form complies with environmental regulations and is safer for both users and the environment.

Terminal Pitch: 0.4 mm

Fine terminal pitch of 0.4 mm allows for closer spacing of terminals, enabling higher density integration on circuit boards.

Maximum Supply Voltage (Vsup): 3.6 V

High maximum supply voltage rating of 3.6 V provides flexibility in power supply options and compatibility with various systems.

Technical Specifications

Silicon Tuner ICs LV24250LS attributes and parameters. Explore more Silicon Tuner ICs devices from Onsemi

Specs

Additional Features:

IT ALSO REQUIRES 2.5V TO 3.6V SUPPLY

Built-in IF Amplifier (IF):

NO

General IC Type:

JESD-30 Code:

S-XQCC-N24

Length:

3.5 mm

No. of Functions:

1

No. of Terminals:

24

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

-20 Cel

Package Body Material:

UNSPECIFIED

Package Code:

Package Shape:

Package Style (Meter):

CHIP CARRIER, VERY THIN PROFILE

Qualification:

Not Qualified

Maximum Seated Height:

.85 mm

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

2.6 V

Surface Mount:

YES

Technology:

BICMOS

Temperature Grade:

Terminal Form:

Terminal Pitch:

.4 mm

Terminal Position:

QUAD

Width:

3.5 mm

Trade Compliance

LV24250LS General Purpose ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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