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LV23200T

Onsemi

LV23200T by Onsemi

LV23200T by Onsemi is a Silicon Tuner IC with 36 terminals, operating b/w -20 to 80 °C. It supports 2 bands, requires Vsup of 4.5-6V, and utilizes BICMOS technology. Ideal for audio tuner applications due to its small form factor and surface-mount capability.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

< 1k

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Digiode

USA . 234 parts In-Stock

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Vyrian

USA . 216 parts In-Stock

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216

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SupplyDigital Components

Austria . 5,055 parts In-Stock

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5,055

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TANS Electronics

Latvia . 2,741 parts In-Stock

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Problanco Electronics

Mexico . 624 parts In-Stock

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Kulean Microsystems

USA . 467 parts In-Stock

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467

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Corphita

USA . 315 parts In-Stock

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UHIMA Technologies

Türkiye . 300 parts In-Stock

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Corohmni

South Africa . 158 parts In-Stock

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Overview

Upgrade your audio experience with the LV23200T by Onsemi, a top-quality Silicon Tuner IC that delivers superior performance and reliability. Manufactured by Onsemi, a trusted name in the industry, this versatile product is perfect for a wide range of applications. With its compact design and advanced technology, the LV23200T offers customers exceptional value, benefits, and advantages. Bring your audio projects to the next level with the LV23200T from Onsemi.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material is lightweight, durable, and cost-effective, making the product convenient to handle and transport.

Surface Mount: YES

Surface mounting allows for easy installation on circuit boards, saving time and effort during assembly.

Package Shape: RECTANGULAR

The rectangular shape makes it easy to align and fit the tuner IC on the circuit board, ensuring efficient use of space.

General IC Type: AUDIO TUNER

Specifically designed for audio tuning applications, ensuring optimal performance and clarity in audio reception.

No. of Terminals: 36

Ample terminals provide multiple connectivity options and enhance functionality for diverse applications.

Package Style (Meter): SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

Compact design with a thin profile saves space on the circuit board and promotes efficient heat dissipation.

Maximum Operating Temperature: 80 °C

The high operating temperature range allows for reliable performance even under demanding conditions.

No. of Bands: 2

Support for multiple bands enables versatility and compatibility with a variety of audio tuning requirements.

Minimum Operating Temperature: -20 °C

The low operating temperature range ensures stable performance even in cold environments.

Terminal Position: DUAL

Dual terminal positions provide flexibility in installation and connection options, enhancing usability.

Maximum Seated Height: 1.2 mm

Low seated height facilitates compact design and efficient integration into space-constrained devices.

Width: 5.6 mm

Narrow width allows for easy placement in tight spaces and optimizes board layout for streamlined circuit design.

Minimum Supply Voltage (Vsup): 4.5 V

Low minimum supply voltage requirement ensures compatibility with a wide range of power sources.

Length: 9.75 mm

Moderate length provides a balance between compact size and functionality, making it suitable for various applications.

Temperature Grade: COMMERCIAL EXTENDED

Commercial extended temperature grade ensures reliable operation in commercial environments with fluctuating temperatures.

Technology: BICMOS

BICMOS technology offers a combination of bipolar and CMOS benefits, providing high-speed performance and low power consumption.

Terminal Form: GULL WING

Gull wing terminals provide secure connections and easy soldering, enhancing the overall reliability of the product.

Terminal Pitch: 0.5 mm

Fine terminal pitch allows for high-density mounting and enables compact design without sacrificing connectivity options.

Maximum Supply Voltage (Vsup): 6 V

Moderate maximum supply voltage capability ensures compatibility with a wide range of power sources, enhancing versatility.

Technical Specifications

Silicon Tuner ICs LV23200T attributes and parameters. Explore more Silicon Tuner ICs devices from Onsemi

Specs

Additional Features:

ALSO REQUIRES 2.7V TO 3.3V DIGITAL SUPPLY

Built-in IF Amplifier (IF):

NO

General IC Type:

JESD-30 Code:

R-PDSO-G36

Length:

9.75 mm

No. of Bands:

2

No. of Functions:

1

No. of Terminals:

36

Maximum Operating Temperature:

80 Cel

Minimum Operating Temperature:

-20 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

Qualification:

Not Qualified

Maximum Seated Height:

1.2 mm

Maximum Supply Voltage (Vsup):

6 V

Minimum Supply Voltage (Vsup):

4.5 V

Surface Mount:

YES

Technology:

BICMOS

Temperature Grade:

Terminal Form:

Terminal Pitch:

.5 mm

Terminal Position:

DUAL

Width:

5.6 mm

Trade Compliance

LV23200T General Purpose ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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