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LA8153LF

Onsemi

LA8153LF by Onsemi

LA8153LF by Onsemi is a 28-terminal RF/Microwave Up/Down Converter with 3.3V power supply, max operating temp of 70 °C, and min operating temp of -20°C. It features plastic/epoxy package body material and surface mounting feature. Ideal for applications requiring high-frequency signal conversion in various electronic devices.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Digiode

USA . 2,327 parts In-Stock

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Vyrian

USA . 1,077 parts In-Stock

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1,077

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Distributors (Availability)

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SupplyDigital Components

Austria . 7,919 parts In-Stock

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Kulean Microsystems

USA . 3,470 parts In-Stock

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3,470

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TANS Electronics

Latvia . 2,093 parts In-Stock

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Problanco Electronics

Mexico . 1,610 parts In-Stock

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1,610

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UHIMA Technologies

Türkiye . 635 parts In-Stock

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635

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Corohmni

South Africa . 429 parts In-Stock

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429

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Corphita

USA . 345 parts In-Stock

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Overview

Elevate your RF/Microwave systems with the LA8153LF by Onsemi. Crafted with precision and quality, this up/down converter offers seamless integration and superior performance. From aerospace to telecommunications, this versatile product is the key to unlocking new possibilities in your applications. With Onsemi's reputation for excellence, you can trust that the LA8153LF delivers unparalleled value, benefits, and advantages to meet all your needs. Upgrade to the LA8153LF and experience innovation like never before.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the internal components, ensuring a longer lifespan for the product.

Power Supplies (V): 3.3

The low power supply voltage of 3.3V makes this converter efficient and suitable for a variety of applications.

No. of Terminals: 28

The high number of terminals allows for versatile connectivity options, making it compatible with a wide range of systems.

Maximum Operating Temperature: 70 °C

With a high maximum operating temperature of 70 °C, this converter can perform reliably in a variety of environmental conditions.

Minimum Operating Temperature: -20 °C

The low minimum operating temperature of -20 °C ensures that this converter can function effectively even in cold environments.

Maximum Supply Current: 130 mA

The low maximum supply current of 130mA helps in minimizing power consumption and heat generation, making this converter energy-efficient.

Mounting Feature: SURFACE MOUNT

The surface mount feature allows for easy and secure installation of the converter onto a PCB, reducing assembly time and effort.

Technical Specifications

RF/Microwave Up/Down Converters LA8153LF attributes and parameters. Explore more RF/Microwave Up/Down Converters devices from Onsemi

Specs

Mounting Feature:

No. of Terminals:

28

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

-20 Cel

Package Body Material:

Package Equivalence Code:

LCC28,.2SQ,20

Power Supplies (V):

3.3

Sub-Category:

RF/Microwave Up/Down Converters

Maximum Supply Current:

130 mA

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

Category top products 20

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