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LA4725-E

Onsemi

LA4725-E by Onsemi

LA4725-E by Onsemi is a 30W audio amplifier IC with 2 channels and 40dB gain. It operates b/w -35 to 85 °C, with harmonic distortion of 30%. Suitable for audio applications requiring a power supply of 9-16V.

Median Price

$3.833

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (Authorized)

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Arrow

USA . 49 parts In-Stock

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$3.276

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Chip1Stop

Japan . 49 parts In-Stock

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$4.390

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Verical

USA . 49 parts In-Stock

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Digiode

USA . 154 parts In-Stock

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$3.112

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Vyrian

USA . 5,142 parts In-Stock

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Ampacity Inc.

Singapore . 49 parts In-Stock

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$2.780

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Corphita

USA . 1,747 parts In-Stock

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$2.948

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Corohmni

South Africa . 429 parts In-Stock

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$3.276

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AZTECH Wire

Italy . 1,173 parts In-Stock

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$13.390

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TANS Electronics

Latvia . 8,324 parts In-Stock

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Microchip USA

USA . 4,893 parts In-Stock

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SupplyDigital Components

Austria . 2,899 parts In-Stock

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Problanco Electronics

Mexico . 1,413 parts In-Stock

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Kulean Microsystems

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Authorized Procurement Solutions

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UHIMA Technologies

Türkiye . 190 parts In-Stock

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Kepictronics

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Perfect Parts

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Overview

Elevate your audio experience with the LA4725-E by Onsemi. Crafted with precision and expertise, this audio amplifier delivers unmatched quality and performance. Whether you're a music enthusiast or a tech-savvy professional, this product is designed to meet all your audio needs with its 30W nominal output power and 40dB gain. From crystal-clear sound to seamless integration, the LA4725-E offers unparalleled value and benefits that will elevate your audio projects to new heights. Experience the difference with Onsemi's cutting-edge technology and superior craftsmanship in the world of audio amplifiers.

Feature Benefit Bullets

Package Shape: RECTANGULAR

Rectangular package shape allows for easy integration into various audio and video amplifier systems.

Harmonic Distortion: 30%

Low harmonic distortion ensures high quality sound output with minimal interference.

Power Supplies (V): 13.2

Optimal power supply voltage for efficient performance and energy usage.

No. of Terminals: 14

Sufficient number of terminals for connecting various audio sources and output devices.

Package Style (Meter): FLANGE MOUNT

Flange mount package style provides secure mounting options in different audio setups.

Maximum Operating Temperature: 85 °C

High maximum operating temperature ensures reliable performance even in demanding conditions.

Minimum Operating Temperature: -35 °C

Wide range of operating temperatures allows for versatility in usage environments.

Terminal Finish: TIN BISMUTH

Tin bismuth terminal finish offers good conductivity and durability for long-lasting connections.

Nominal Output Power: 30 W

Decent output power for clear and loud audio amplification.

Minimum Supply Voltage (Vsup): 9 V

Low minimum supply voltage requirement for compatibility with various power sources.

No. of Channels: 2

Dual channel setup for stereo sound output capabilities.

Technology: BIPOLAR

Bipolar technology ensures accurate amplification of audio signals without distortion.

Nominal Bandwidth: 0.02 kHz

Wide bandwidth range for reproducing a variety of audio frequencies accurately.

Terminal Form: THROUGH-HOLE

Through-hole terminal form for easy soldering and secure connections in audio systems.

Maximum Supply Current: 250 mA

Low maximum supply current for efficient power usage and less heat generation.

Terminal Pitch: 1.78 mm

Close terminal pitch for compact design and efficient PCB layout.

Gain: 40 dB

High gain amplification for boosting audio signals with clarity and precision.

Maximum Supply Voltage (Vsup): 16 V

Safe maximum supply voltage limit for protecting the amplifier components from damage.

Technical Specifications

Audio & Video Amplifiers LA4725-E attributes and parameters. Explore more Audio & Video Amplifiers devices from Onsemi

Specs

Nominal Bandwidth:

.02 kHz

General IC Type:

Gain:

40 dB

Harmonic Distortion:

30 %

JESD-30 Code:

R-XZFM-T14

JESD-609 Code:

e6

No. of Channels:

2

No. of Functions:

1

No. of Terminals:

14

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-35 Cel

Nominal Output Power:

30 W

Package Body Material:

UNSPECIFIED

Package Code:

ZIP

Package Equivalence Code:

ZIP14,.06,.09,70

Package Shape:

Package Style (Meter):

FLANGE MOUNT

Power Supplies (V):

13.2

Qualification:

Not Qualified

Sub-Category:

Audio/Video Amplifiers

Maximum Supply Current:

250 mA

Maximum Supply Voltage (Vsup):

16 V

Minimum Supply Voltage (Vsup):

9 V

Surface Mount:

NO

Technology:

BIPOLAR

Temperature Grade:

Terminal Finish:

TIN BISMUTH

Terminal Form:

Terminal Pitch:

1.78 mm

Terminal Position:

ZIG-ZAG

Trade Compliance

LA4725-E General Purpose ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.33.00.01

SB

8542.33.00.00

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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