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LA0151CS

Onsemi

LA0151CS by Onsemi

The Onsemi LA0151CS is a 1.01mm SQUARE LINEAR OUTPUT PHOTO IC with a Min Supply Voltage of 2.2V and Max Temp of 85 °C. Ideal for optoelectronic applications, it operates from -40°C to 85°C with a Max On State Current of 0.0001A.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 2,340 parts In-Stock

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Digiode

USA . 294 parts In-Stock

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TANS Electronics

Latvia . 7,722 parts In-Stock

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Problanco Electronics

Mexico . 6,615 parts In-Stock

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SupplyDigital Components

Austria . 4,878 parts In-Stock

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Corphita

USA . 2,279 parts In-Stock

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Kulean Microsystems

USA . 1,596 parts In-Stock

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UHIMA Technologies

Türkiye . 610 parts In-Stock

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Corohmni

South Africa . 302 parts In-Stock

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Overview

Discover the LA0151CS by Onsemi, a top-quality Photo IC Sensor that offers unparalleled performance and reliability. Manufactured by Onsemi, a trusted leader in the industry, this sensor is ideal for a wide range of applications. From robotics to environmental monitoring, the LA0151CS provides precise and accurate data with its linear output. With a compact size and wide operating temperature range, this sensor is versatile and dependable. Experience the value and benefits of the LA0151CS today and take your projects to the next level.

Feature Benefit Bullets

Configuration: COMPLEX

The complex configuration allows for advanced functionality and features in the photo IC sensor, making it suitable for complex applications.

Size: 1.01 mm

The small size of 1.01 mm allows for compact integration into devices without taking up much space, making it ideal for applications where size is limited.

Optoelectronic Type: LINEAR OUTPUT PHOTO IC

The linear output of the photo IC sensor provides a proportional response to light intensity, offering accurate and precise measurements in various lighting conditions.

Minimum Supply Voltage: 2.2 V

The low minimum supply voltage of 2.2 V ensures efficient power consumption and operation, making the sensor suitable for battery-powered or low-power devices.

Maximum Operating Temperature: 85 °C

The high maximum operating temperature of 85 °C enables the sensor to withstand harsh environmental conditions and perform reliably in a wide range of temperatures.

Shape: SQUARE

The square shape of the sensor simplifies installation and alignment in devices, providing ease of integration and enhancing overall design aesthetics.

Minimum Operating Temperature: -40 °C

The low minimum operating temperature of -40 °C allows the sensor to function effectively in cold environments or under extreme temperature conditions.

Maximum On State Current: 0.0001 A

The low maximum on-state current of 0.0001 A helps in reducing power consumption and heat dissipation, improving the efficiency and longevity of the sensor.

Technical Specifications

Photo IC Sensors LA0151CS attributes and parameters. Explore more Photo IC Sensors devices from Onsemi

Specs

Application:

GENERAL PURPOSE

Configuration:

COMPLEX

Infrared (IR) Range:

NO

No. of Functions:

1

Maximum On State Current:

.0001 A

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Optoelectronic Type:

Shape:

SQUARE

Size:

1.01 mm

Minimum Supply Voltage:

2.2 V

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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