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LA0151CS-TLM-E

Onsemi

LA0151CS-TLM-E by Onsemi

LA0151CS-TLM-E by Onsemi is a single linear output photo IC with 4 terminals. It operates b/w -30 °C to 85°C, with a min supply voltage of 2.2V and nominal voltage of 3.3V. Ideal for switching applications, this square-shaped sensor has a size of 1.01mm and features tin silver copper terminal finish for surface mount installation in various electronic devices.

Median Price

$0.340

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (Authorized)

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DigiKey

USA . 15,000 parts In-Stock

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USA . 15,000 parts In-Stock

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Vyrian

USA . 2,006 parts In-Stock

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Chip Stock

USA . 99,500 parts In-Stock

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Flip Electronics

USA . 15,000 parts In-Stock

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Digiode

USA . 1,055 parts In-Stock

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Corohmni

South Africa . 213 parts In-Stock

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Kulean Microsystems

USA . 8,270 parts In-Stock

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SupplyDigital Components

Austria . 6,639 parts In-Stock

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Problanco Electronics

Mexico . 2,066 parts In-Stock

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TANS Electronics

Latvia . 1,863 parts In-Stock

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UHIMA Technologies

Türkiye . 234 parts In-Stock

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Corphita

USA . 195 parts In-Stock

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Perfect Parts

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GreenTree Electronics

Israel . 85 parts In-Stock

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Overview

Experience the superior quality and precision of the LA0151CS-TLM-E Photo IC Sensor by Onsemi. With a reputation for excellence in manufacturing, Onsemi delivers reliable products that exceed industry standards. This versatile sensor is ideal for various applications in switching systems, providing accurate linear output with a minimum supply voltage of 2.2V. Trust in Onsemi to deliver cutting-edge technology that offers exceptional value and performance to meet your needs.

Feature Benefit Bullets

Configuration: SINGLE

Having a single configuration simplifies the setup and operation of the sensor, making it user-friendly and easy to integrate into various applications.

Size: 1.01 mm

The compact size of 1.01 mm makes this sensor suitable for applications where space is limited, allowing for easy installation in small devices or equipment.

Optoelectronic Type: LINEAR OUTPUT PHOTO IC

The linear output of this photo IC provides a more accurate and predictable response to light levels, making it ideal for applications where precise light detection is crucial.

No. of Terminals: 4

With 4 terminals, this sensor offers versatile connectivity options for different circuit configurations, enabling customization and adaptability to various applications.

Minimum Supply Voltage: 2.2 V

The low minimum supply voltage of 2.2 V helps in reducing power consumption and extending the operational lifespan of the sensor, making it energy-efficient and cost-effective.

Application: SWITCHING

Designed for switching applications, this sensor can reliably detect and respond to changes in light levels, making it suitable for use in safety systems, automation, and other applications requiring accurate light sensing.

Maximum Operating Temperature: 85 °C

With a maximum operating temperature of 85 °C, this sensor can withstand high-temperature environments, ensuring reliable performance in various industrial and automotive applications.

Shape: SQUARE

The square shape of the sensor provides a symmetrical design that simplifies mounting and alignment, making it easy to install and integrate into different devices or equipment.

Minimum Operating Temperature: -30 °C

The low minimum operating temperature of -30 °C allows this sensor to function effectively in cold environments, making it suitable for outdoor or refrigeration applications.

Terminal Finish: TIN SILVER COPPER

The terminal finish of tin, silver, and copper ensures reliable and durable electrical connections, enhancing the sensor's overall performance and longevity in demanding operating conditions.

Nominal Supply Voltage: 3.3 V

The nominal supply voltage of 3.3 V provides a stable power source for the sensor, ensuring consistent and accurate light sensing performance across different operating conditions.

Packing Method: TR

The TR packing method offers convenient packaging for transportation and storage, protecting the sensor from damage or contamination during handling and shipping.

Mounting Feature: SURFACE MOUNT

With a surface-mounting feature, this sensor can be easily and securely attached to PCBs or other surfaces, enabling flexible integration and space-saving installation in compact devices or equipment.

Technical Specifications

Photo IC Sensors LA0151CS-TLM-E attributes and parameters. Explore more Photo IC Sensors devices from Onsemi

Specs

Application:

SWITCHING

Configuration:

SINGLE

Infrared (IR) Range:

NO

Mounting Feature:

No. of Functions:

1

No. of Terminals:

4

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-30 Cel

Optoelectronic Type:

Packing Method:

TR

Shape:

SQUARE

Size:

1.01 mm

Minimum Supply Voltage:

2.2 V

Nominal Supply Voltage:

3.3 V

Terminal Finish:

Trade Compliance

LA0151CS-TLM-E Optoelectronics trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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