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ICTE-10RL4G

Onsemi

ICTE-10RL4G by Onsemi

ICTE-10RL4G by Onsemi is a Zener technology Trans Voltage Suppressor Diode with 1500W peak power dissipation and 10V max repetitive peak reverse voltage. It is used for transient suppression in applications requiring unidirectional polarity protection, such as automotive electronics and industrial control systems.

Median Price

$2.788

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 501 parts In-Stock

1+ parts

-

100+ parts

$0.225

1k+ parts

$0.186

10k+ parts

$0.166

501

-

$0.225

$0.186

$0.166

Verical

USA . 501 parts In-Stock

1+ parts

-

100+ parts

$5.350

1k+ parts

-

10k+ parts

-

501

-

$5.350

-

-

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 2,219 parts In-Stock

1+ parts

$0.175

100+ parts

-

1k+ parts

-

10k+ parts

-

2,219

$0.175

-

-

-

Chip Stock

USA . 15,000 parts In-Stock

1+ parts

-

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15,000

-

-

-

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Vyrian

USA . 11,164 parts In-Stock

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-

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-

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11,164

-

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-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corphita

USA . 668 parts In-Stock

1+ parts

$0.166

100+ parts

-

1k+ parts

-

10k+ parts

-

668

$0.166

-

-

-

Corohmni

South Africa . 165 parts In-Stock

1+ parts

$0.184

100+ parts

-

1k+ parts

-

10k+ parts

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165

$0.184

-

-

-

AZTECH Wire

Italy . 1,027 parts In-Stock

1+ parts

$20.130

100+ parts

-

1k+ parts

-

10k+ parts

-

1,027

$20.130

-

-

-

Component Stockers USA

USA . 737 parts In-Stock

1+ parts

$99.990

100+ parts

-

1k+ parts

-

10k+ parts

-

737

$99.990

-

-

-

TANS Electronics

Latvia . 2,768 parts In-Stock

1+ parts

-

100+ parts

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2,768

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-

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SupplyDigital Components

Austria . 1,460 parts In-Stock

1+ parts

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1,460

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Problanco Electronics

Mexico . 1,190 parts In-Stock

1+ parts

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1,190

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Kulean Microsystems

USA . 998 parts In-Stock

1+ parts

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100+ parts

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998

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-

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UHIMA Technologies

Türkiye . 521 parts In-Stock

1+ parts

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100+ parts

-

1k+ parts

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10k+ parts

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521

-

-

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-

Overview

Experience unmatched quality and reliability with the ICTE-10RL4G by Onsemi, a leading manufacturer of Transient Suppression Devices. This product offers superior protection against voltage spikes and surges, ensuring the safety of your electronic devices. Ideal for a wide range of applications, this diode is designed to provide maximum power dissipation and minimum breakdown voltage, giving you peace of mind knowing your equipment is safeguarded. Trust Onsemi to deliver high-performance solutions that exceed expectations.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy package material ensures durability and protection for the diode, making it a reliable choice for transient suppression.

Maximum Non Repetitive Peak Reverse Power Dissipation: 1500 W

With a high peak reverse power dissipation, this product can handle sudden spikes in voltage without being damaged, providing effective transient suppression.

Minimum Breakdown Voltage: 11.7 V

The minimum breakdown voltage of 11.7 V ensures that the diode activates at the appropriate voltage level, effectively suppressing transient voltage spikes.

Diode Type: TRANS VOLTAGE SUPPRESSOR DIODE

Being specifically designed as a trans voltage suppressor diode, this product is optimized for transient suppression applications, ensuring reliable performance.

Maximum Clamping Voltage: 16.7 V

The maximum clamping voltage of 16.7 V indicates the threshold at which the diode starts conducting to suppress voltage spikes, offering effective protection for connected devices.

Technical Specifications

Transient Suppression Devices ICTE-10RL4G attributes and parameters. Explore more Transient Suppression Devices devices from Onsemi

Specs

Additional Features:

EXCELLENT CLAMPING CAPABILITY, HIGH RELIABILITY, LOW IMPEDANCE

Minimum Breakdown Voltage:

11.7 V

Case Connection:

ISOLATED

Maximum Clamping Voltage:

16.7 V

Config:

SINGLE

Diode Element Material:

SILICON

JESD-30 Code:

O-PALF-W2

JESD-609 Code:

e3

Maximum Non Repetitive Peak Reverse Power Dissipation:

1500 W

No. of Elements:

1

No. of Terminals:

2

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

LONG FORM

Peak Reflow Temperature (C):

260

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

5 W

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

10 V

Sub-Category:

Transient Suppressors

Surface Mount:

NO

Technology:

ZENER

Terminal Finish:

TIN

Terminal Form:

Terminal Position:

Trade Compliance

ICTE-10RL4G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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