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H11AG1SM

Onsemi

H11AG1SM by Onsemi

H11AG1SM by Onsemi is a SINGLE optocoupler with max. forward current of 0.05A, min. operating temp. -40°C, and max. isolation voltage of 7500V. Ideal for applications requiring high current transfer ratio, low dark current, and surface mounting feature in electronic circuits.

Median Price

$0.762

Lifecycle Status

Suppliers In-Stock

12

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 525 parts In-Stock

1+ parts

$1.940

100+ parts

$1.000

1k+ parts

$0.690

10k+ parts

$0.609

525

$1.940

$1.000

$0.690

$0.609

Rochester

USA . 4,402 parts In-Stock

1+ parts

-

100+ parts

$0.828

1k+ parts

$0.687

10k+ parts

$0.613

4,402

-

$0.828

$0.687

$0.613

DigiKey

USA . 2,000 parts In-Stock

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1k+ parts

$0.560

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2,000

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$0.560

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Flip Electronics (Authorized)

USA . 1,000 parts In-Stock

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1,000

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Farnell

UK . 294 parts In-Stock

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$0.697

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294

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$0.697

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Distributors (In-Stock)

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Digiode

USA . 2,112 parts In-Stock

1+ parts

$0.643

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2,112

$0.643

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Nova Conductors

Japan . 10 parts In-Stock

1+ parts

$0.724

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10

$0.724

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DigiKey Marketplace

USA . 4,108 parts In-Stock

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4,108

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Chip Stock

USA . 3,037 parts In-Stock

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3,037

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Flip Electronics

USA . 2,000 parts In-Stock

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2,000

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Vyrian

USA . 1,663 parts In-Stock

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1,663

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Prism Electronics

USA . 45 parts In-Stock

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45

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Distributors (Availability)

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Semicontronic

India . 1,700 parts In-Stock

1+ parts

$0.580

100+ parts

$0.566

1k+ parts

$0.563

10k+ parts

-

1,700

$0.580

$0.566

$0.563

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Ampacity Inc.

Singapore . 1,600 parts In-Stock

1+ parts

$0.580

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1,600

$0.580

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Corphita

USA . 647 parts In-Stock

1+ parts

$0.609

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647

$0.609

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Corohmni

South Africa . 323 parts In-Stock

1+ parts

$0.677

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323

$0.677

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Argo Parts USA

USA . 1,732 parts In-Stock

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$0.724

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1,732

$0.724

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Advanced Electronics

New Zealand . 300 parts In-Stock

1+ parts

$0.753

100+ parts

$0.685

1k+ parts

$0.617

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300

$0.753

$0.685

$0.617

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TANS Electronics

Latvia . 7,456 parts In-Stock

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7,456

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SupplyDigital Components

Austria . 5,373 parts In-Stock

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5,373

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Continental Prestige Electronics

USA . 4,402 parts In-Stock

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$0.810

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$0.810

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Perfect Parts

USA . 2,908 parts In-Stock

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2,908

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Kulean Microsystems

USA . 2,482 parts In-Stock

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Supply Digital

USA . 1,716 parts In-Stock

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1,716

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UHIMA Technologies

Türkiye . 851 parts In-Stock

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851

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Problanco Electronics

Mexico . 779 parts In-Stock

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779

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Overview

Discover the innovative H11AG1SM optocoupler transistor output by Onsemi, renowned for its superior quality and reliability. This versatile component offers a wide range of applications in various industries, providing a seamless connection between different circuits. With a maximum isolation voltage of 7500V and a minimum current transfer ratio of 300%, this product ensures optimal performance and efficiency. Trust Onsemi to deliver cutting-edge technology that meets your needs and exceeds your expectations. Elevate your projects with the H11AG1SM and experience the difference in quality and value it brings to your designs.

Feature Benefit Bullets

Configuration: SINGLE

Single configuration makes it easy to integrate into circuits and reduces complexity.

Maximum Forward Current: 0.05 A

The high maximum forward current allows for reliable operation in various applications.

Optoelectronic Type: TRANSISTOR OUTPUT OPTOCOUPLER

The transistor output optocoupler provides a high level of electrical isolation and noise immunity.

Maximum Operating Temperature: 100 °C

High maximum operating temperature ensures stability and performance in demanding environments.

Minimum Operating Temperature: -40 °C

Wide range of minimum operating temperature allows for use in a variety of temperature conditions.

Terminal Finish: TIN

Tin terminal finish provides good conductivity and corrosion resistance.

Maximum Power Dissipation: 0.26 W

Low power dissipation helps in reducing energy consumption and heat generation.

Minimum Current Transfer Ratio: 300 %

High minimum current transfer ratio ensures efficient signal transfer between input and output.

Maximum Dark Current: 10000 nA

Low dark current minimizes leakage and improves overall performance.

Minimum Collector-emitter Breakdown Voltage: 30 V

High breakdown voltage provides protection against voltage spikes and overloads.

Nominal Current Transfer Ratio: 300 %

Consistent nominal current transfer ratio ensures reliable operation over time.

Maximum Isolation Voltage: 7500 V

High isolation voltage enhances safety and protects sensitive components from high voltages.

Mounting Feature: SURFACE MOUNT

Surface mount feature makes it easy to mount on PCBs and reduces assembly time.

Maximum Forward Voltage: 1.5 V

Low maximum forward voltage minimizes power loss and improves efficiency.

Maximum On State Current: 0.05 A

High maximum on-state current allows for reliable operation under load.

Technical Specifications

Optocoupler Transistor Outputs H11AG1SM attributes and parameters. Explore more Optocoupler Transistor Outputs devices from Onsemi

Specs

Additional Features:

UL RECOGNIZED

Minimum Collector-emitter Breakdown Voltage:

30 V

Configuration:

SINGLE

Minimum Current Transfer Ratio:

300 %

Nominal Current Transfer Ratio:

300 %

Maximum Dark Current:

10000 nA

Maximum Forward Current:

.05 A

Maximum Forward Voltage:

1.5 V

Maximum Isolation Voltage:

7500 V

JESD-609 Code:

e3

Mounting Feature:

No. of Elements:

1

Maximum On State Current:

.05 A

Maximum Operating Temperature:

100 Cel

Minimum Operating Temperature:

-40 Cel

Optoelectronic Type:

Maximum Power Dissipation:

.26 W

Sub-Category:

Optocoupler - Transistor Outputs

Terminal Finish:

TIN

Trade Compliance

H11AG1SM Optoelectronics trade compliance attributes, and parameters.

HTS

8541.40.80.00

SB

8541.40.80.00

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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