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FW707-TL-E

Onsemi

FW707-TL-E by Onsemi

The Onsemi FW707-TL-E is a P-CHANNEL FET with 8A max drain current and 2.5W power dissipation. Ideal for surface mount applications, it operates in enhancement mode at up to 150 °C. Suitable for various electronic devices requiring high-power switching capabilities.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 1,537 parts In-Stock

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Digiode

USA . 564 parts In-Stock

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564

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Native Components

USA . 807 parts In-Stock

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$8.180

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807

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Northwest PG Solutions

USA . 1,159 parts In-Stock

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$8.998

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$8.098

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$8.998

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Kulean Microsystems

USA . 7,281 parts In-Stock

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SupplyDigital Components

Austria . 6,102 parts In-Stock

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TANS Electronics

Latvia . 4,179 parts In-Stock

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Problanco Electronics

Mexico . 3,701 parts In-Stock

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Corphita

USA . 821 parts In-Stock

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UHIMA Technologies

Türkiye . 397 parts In-Stock

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Corohmni

South Africa . 301 parts In-Stock

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Overview

Unlock the next level of performance with the FW707-TL-E P-CHANNEL Other Function Transistor from Onsemi. Engineered with cutting-edge METAL-OXIDE SEMICONDUCTOR technology, this transistor offers a maximum Drain Current of 8A and Power Dissipation of 2.5W, making it ideal for a wide range of applications. From power management to signal processing, this transistor delivers unmatched reliability and efficiency. Trust Onsemi's reputation for quality and innovation, and experience the difference in your projects with the FW707-TL-E.

Feature Benefit Bullets

Polarity or Channel Type: P-CHANNEL

P-channel transistors are well-suited for use in high-side switching applications and can handle higher voltages compared to N-channel transistors.

Surface Mount: YES

Surface mount transistors are smaller in size and lighter in weight, making them ideal for compact and portable electronic devices.

Operating Mode: ENHANCEMENT MODE

Enhancement mode transistors operate on a normally-off state, providing better control over the flow of current and reducing power consumption.

Maximum Drain Current (Abs) (ID): 8 A

With a high maximum drain current, this transistor can handle heavy loads and is suitable for applications requiring high current output.

Maximum Power Dissipation (Abs): 2.5 W

The low power dissipation helps in minimizing heat generation and improving overall efficiency of the electronic circuit.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Metal-oxide semiconductor technology offers high input impedance, low power consumption, and fast switching speeds, making it suitable for a wide range of applications.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature, this transistor can withstand elevated temperatures without compromising performance, ensuring reliability in various environments.

Terminal Finish: Tin/Bismuth (Sn/Bi)

The tin/bismuth terminal finish provides good solderability and reliability, making it easier to integrate the transistor into electronic circuits during assembly.

Technical Specifications

Other Function Transistors FW707-TL-E attributes and parameters. Explore more Other Function Transistors devices from Onsemi

Specs

Maximum Drain Current (Abs) (ID):

8 A

Maximum Drain Current (ID):

8 A

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-609 Code:

e6

Moisture Sensitivity Level (MSL):

1

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

Tin/Bismuth (Sn/Bi)

Trade Compliance

FW707-TL-E Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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