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FODM3062V

Onsemi

FODM3062V by Onsemi

FODM3062V by Onsemi is a single TRIAC output optocoupler with a max on-state voltage of 3V and forward current of 0.06A. It operates b/w -40 °C to 100°C, has an isolation voltage of 3750V, and is ideal for applications requiring optocoupler trigger device outputs in surface mount configurations.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Digiode

USA . 2,327 parts In-Stock

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Vyrian

USA . 1,627 parts In-Stock

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Native Components

USA . 374 parts In-Stock

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$0.259

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Northwest PG Solutions

USA . 1,267 parts In-Stock

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TANS Electronics

Latvia . 7,059 parts In-Stock

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SupplyDigital Components

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Problanco Electronics

Mexico . 4,555 parts In-Stock

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Corphita

USA . 2,541 parts In-Stock

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Supply Digital

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UHIMA Technologies

Türkiye . 521 parts In-Stock

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Corohmni

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Kulean Microsystems

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Overview

Elevate your electronics projects with the FODM3062V by Onsemi, a high-quality optocoupler trigger device output that offers exceptional value and performance. Manufactured by Onsemi, a trusted name in the industry, this product is ideal for a wide range of applications. With a maximum on-state voltage of 3 V and a maximum forward current of 0.06 A, the FODM3062V provides reliability and efficiency. Whether you're working on industrial controls, motor drives, or power supplies, this optocoupler delivers superior isolation and protection. Experience the benefits of seamless integration and peace of mind with the FODM3062V from Onsemi.

Feature Benefit Bullets

Maximum On State Voltage: 3 V

Low maximum on state voltage ensures safe operation and minimizes power consumption.

Configuration: SINGLE

SINGLE configuration simplifies installation and reduces complexity in the circuit design.

Maximum Forward Current: 0.06 A

Ability to handle up to 0.06 A of forward current allows for reliable operation under load.

Optoelectronic Type: TRIAC OUTPUT OPTOCOUPLER

Triac output optocoupler offers efficient switching capabilities for a variety of applications.

Maximum Operating Temperature: 100 °C

High maximum operating temperature provides flexibility for use in diverse environments.

Minimum Operating Temperature: -40 °C

Wide range of operating temperatures ensures product reliability in extreme conditions.

Maximum Input Trigger Current: 0.01 A

Low maximum input trigger current helps in minimizing control signal requirements.

Repetitive Off-state Voltage (Peak): 600 V

High off-state voltage capability allows for safe and effective isolation between input and output.

Packing Method: TUBE

Tube packing method ensures convenient handling and storage of the product.

Maximum Reverse Leakage Current: 0.0001 A

Low maximum reverse leakage current enhances efficiency and prevents unwanted power loss.

Minimum Peak Off-state Voltage: 600 V

High minimum peak off-state voltage ensures reliable isolation in critical applications.

Maximum Isolation Voltage: 3750 V

High isolation voltage capability provides enhanced safety and protection in the circuit.

Mounting Feature: SURFACE MOUNT

Surface mounting feature enables easy and secure installation on PCBs.

Maximum On State Current: 0.07 A

Ability to handle up to 0.07 A of on state current ensures robust performance under load conditions.

Technical Specifications

Optocoupler Trigger Device Outputs FODM3062V attributes and parameters. Explore more Optocoupler Trigger Device Outputs devices from Onsemi

Specs

Additional Features:

UL APPROVED, VDE APPROVED

Configuration:

SINGLE

Maximum Forward Current:

.06 A

Maximum Input Trigger Current:

.01 A

Maximum Isolation Voltage:

3750 V

Mounting Feature:

No. of Elements:

1

Maximum On State Current:

.07 A

Maximum On State Voltage:

3 V

Maximum Operating Temperature:

100 Cel

Minimum Operating Temperature:

-40 Cel

Optoelectronic Type:

Packing Method:

TUBE

Minimum Peak Off-state Voltage:

600 V

Repetitive Off-state Voltage (Peak):

600 V

Maximum Reverse Leakage Current:

.0001 A

Trade Compliance

FODM3062V Optoelectronics trade compliance attributes, and parameters.

HTS

8541.40.80.00

SB

8541.40.80.00

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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